Mikhail LARIONOV,

Abstract: Prototype sensors are described that are applicable for pressure, position, temperature, and field measurements in the temperature range of 4.2 to 300 K. The strain gauges utilize the silicon substrate and thin film technology. The tensosensitivity of strain sensors is 40 µV/mln-1 or better depending on metrological characteristics of semiconductor films, orientation, and current. The temperature sensors (thermistors) make use of the germanium powder bulk. The temperature coefficient of resistance is within 50-100 % /K at 4.2 K. The magnetic field sensors use GaAs films that offer weak temperature dependence of parameters at high sensitivity (up to 300-400 mV/T). Copyright © 2014 IFSA Publishing, S.L