Physical Modeling of Silicon Microstrip Detectors: Influence of the Electrode Geometry on Critical Electric Fields

In this paper, a computer-based analysis of AC-coupled silicon microstrip detectors is presented. The study aims at investigating the main geometrical parameters responsible for potentially critical effects, such as early micro-discharges and breakdown phenomena. The adoption of CAD tools allows for evaluating the actual field distribution within the device, and makes it possible to identify critical regions. The adoption of overhanging metal strips is shown to have a positive impact on the electric field distribution, reducing corner effects and thus minimizing breakdown risks. Presented at IEEE Nuclear Science Symposium, Seattle, WA (U.S.A.), October 24-30, 1999 Submitted to IEEE Transactions on Nuclear Science 1 Introduction Silicon microstrip detectors are being widely used within vertex detectors used in High Energy Physics (HEP) experiments: their exploitation in future, high-luminosity colliders, however, requires some issues concerning radiation hardness to be carefull..