Design and Analysis of a Low Actuated Voltage RF MEMS Shunt Capacitive Switch for Ka Band

Abstract — RF MEMS Switches are one of the most prominent and remarkable future micro-machined products that have gain attention in last year’s. This Paper presents design, analysis and proposed fabrication process and simulation of a low actuated voltage shunt capacitive RF MEMS Switch. The Air gap in between the membrane and CPW signal line is 1.5 µm. The lowest actuation voltage of switch is 2 Volts. The proposed fixedfixed flexures beam design provides excellent RF Characteristics (Isolation-44 dB at 26.5 GHZ and insertion loss-0.26 dB at 26.5 GHZ). The results show that the proposed switch is suitable for Ka- band applications. II. DESIGN OF SWITCH The pull in voltage (VPI) is represented by [4]