Add to ORKGIn recent years, In2S3 thin films were widely used as buffer/window layer in thin film solar cells as an alternative to toxic CdS. In the present work, we demonstrate the potential of surface photovoltage spectroscopy for estimation of minority carrier diffusion length, band gap energy and refractive index of thermally evaporated In2S3 thin films. The estimated minority carrier diffusion length of In2S3 thin films from SPV measurements were 0.112 μm and 0.052 μm for films annealed at 250 and 300 °C respectively
The present work investigates the effect of precursor concentration (mc) on the structural, optical,...
Abstract The structural, compositional, morphological and optical properties of In2S3 thin films, p...
Indium sulfide (In<sub>2</sub>S<sub>3</sub>) is a promising absorber base for substitutionally doped...
In recent years, In2S3 thin films were widely used as buffer/window layer in thin film solar cells a...
In2S3 is a III-VI group semiconductor with n-type conductivity and a wide band gap energy, which can...
In2S3 is a III-VI group semiconductor with n-type conductivity and a wide band gap energy, which can...
AbstractIn2S3 thin films have been synthesized by annealing indium thin films under sulfur pressure....
In2S3 is one of the attractive compounds taking remarkable interest in optoelectronic device applica...
Indium sulfide (In2S3) is widely used as a buffer layer alternative to CdS for thin film solar cell ...
AbstractIn2S3 thin films have been synthesized by annealing indium thin films under sulfur pressure....
The minority carrier diffusion length of the “absorber layer” in a solar cell is generally accepted ...
International audienceIn the present study the optical properties of co-evaporated indium sulfide th...
Abstract: The In2S3 thin film is prepared using sulfurate method under a vacuum in a sealed tube of ...
Thin films of indium sulphide containing oxygen have been synthesized following a dry physical proce...
Thin films of indium sulphide containing oxygen have been synthesized following a dry physical proce...
The present work investigates the effect of precursor concentration (mc) on the structural, optical,...
Abstract The structural, compositional, morphological and optical properties of In2S3 thin films, p...
Indium sulfide (In<sub>2</sub>S<sub>3</sub>) is a promising absorber base for substitutionally doped...
In recent years, In2S3 thin films were widely used as buffer/window layer in thin film solar cells a...
In2S3 is a III-VI group semiconductor with n-type conductivity and a wide band gap energy, which can...
In2S3 is a III-VI group semiconductor with n-type conductivity and a wide band gap energy, which can...
AbstractIn2S3 thin films have been synthesized by annealing indium thin films under sulfur pressure....
In2S3 is one of the attractive compounds taking remarkable interest in optoelectronic device applica...
Indium sulfide (In2S3) is widely used as a buffer layer alternative to CdS for thin film solar cell ...
AbstractIn2S3 thin films have been synthesized by annealing indium thin films under sulfur pressure....
The minority carrier diffusion length of the “absorber layer” in a solar cell is generally accepted ...
International audienceIn the present study the optical properties of co-evaporated indium sulfide th...
Abstract: The In2S3 thin film is prepared using sulfurate method under a vacuum in a sealed tube of ...
Thin films of indium sulphide containing oxygen have been synthesized following a dry physical proce...
Thin films of indium sulphide containing oxygen have been synthesized following a dry physical proce...
The present work investigates the effect of precursor concentration (mc) on the structural, optical,...
Abstract The structural, compositional, morphological and optical properties of In2S3 thin films, p...
Indium sulfide (In<sub>2</sub>S<sub>3</sub>) is a promising absorber base for substitutionally doped...