Дефектно-примесная инженерия. Радиационные эффекты в полупроводникахNitrogen-doped CVD diamond treated with electron irradiation and subsequent annealing at temperatures from 860 to 1900 °C was studied using FTIR absorption. It was found that nitrogen impurity produces many novel optical centers active in infrared spectral range. The most prominent of them are ascribed to nitrogen-hydrogen complexes. These centers produce absorption lines at 2827, 2874, 2906, 2949, 2990, 3031, 3107, 3123 and 3310 cm-1. Two characteristic absorptions at wavenumbers 1293 cm-1 and 1341 cm-1 were tentatively ascribed to a modified form of nitrogen A-aggregates. A conclusion has been made that in nitrogen-doped CVD diamonds nitrogen atoms may form nitrogen-hydro...
The nitrogen-vacancy (NV) color center in diamond has attracted a lot of attention during the past f...
We report on electron paramagnetic resonance (EPR) studies of nitrogen doped diamond that has been ¹...
In this work, we investigate the influence of some growth parameters such as high microwave power ra...
Defects in single crystal diamond grown by chemical vapour deposition (SC-CVD) have been studied usi...
EPR measurements have been carried out on a range of differently doped samples, and amongst the many...
Hydrogen-related infrared absorption bands in natural diamonds have been extensively investigated an...
The nitrogen-vacancy (NV) centre is a fluorescent defect in diamond that is of critical importance f...
Diamond is a wide band gap material with many optically active defect centers. Among all, the most i...
We show reduction in the emission from nitrogen-vacancy (NV) centers in single crystal diamond due t...
The negatively-charged nitrogen-vacancy (NV) center is the most studied optical center in diamond an...
In this paper, we investigate on the presence of hydrogen and nitrogen related infrared absorptions ...
A 820 micron thick single crystal diamond layer epitaxially grown on a single crystal diamond seed (...
This thesis reports research on the identification and characterisation of point defects in chemical...
The burgeoning multi-field applications of diamond concurrently bring up a foremost consideration as...
We found that very high concentrations (up to 20% vol) of nitrogen in the ethanol/hydrogen gas mixtu...
The nitrogen-vacancy (NV) color center in diamond has attracted a lot of attention during the past f...
We report on electron paramagnetic resonance (EPR) studies of nitrogen doped diamond that has been ¹...
In this work, we investigate the influence of some growth parameters such as high microwave power ra...
Defects in single crystal diamond grown by chemical vapour deposition (SC-CVD) have been studied usi...
EPR measurements have been carried out on a range of differently doped samples, and amongst the many...
Hydrogen-related infrared absorption bands in natural diamonds have been extensively investigated an...
The nitrogen-vacancy (NV) centre is a fluorescent defect in diamond that is of critical importance f...
Diamond is a wide band gap material with many optically active defect centers. Among all, the most i...
We show reduction in the emission from nitrogen-vacancy (NV) centers in single crystal diamond due t...
The negatively-charged nitrogen-vacancy (NV) center is the most studied optical center in diamond an...
In this paper, we investigate on the presence of hydrogen and nitrogen related infrared absorptions ...
A 820 micron thick single crystal diamond layer epitaxially grown on a single crystal diamond seed (...
This thesis reports research on the identification and characterisation of point defects in chemical...
The burgeoning multi-field applications of diamond concurrently bring up a foremost consideration as...
We found that very high concentrations (up to 20% vol) of nitrogen in the ethanol/hydrogen gas mixtu...
The nitrogen-vacancy (NV) color center in diamond has attracted a lot of attention during the past f...
We report on electron paramagnetic resonance (EPR) studies of nitrogen doped diamond that has been ¹...
In this work, we investigate the influence of some growth parameters such as high microwave power ra...