Add to ORKGThe influence of the rare-earth doping on the microhardness of the Cz-silicon and Cz-germanium monocrystals has been studied. It is established that rare-earth atom (Dy, Er, Nd) clusters increase the microhardness of the covalent semiconductors. The decrease of the microhardness of silicon wafers from the monocrystal top take place because this elements are the effective getters for the background tecnological impurities
Temperature and size effects in thin films Co, Ni, Cr, Cu and Crfilms with Ge overlayer were investi...
A model of low frequency current oscillations in semi-insulating crystalline semiconductors with dee...
A number of new structural defects in a volume and on surfaces of Si-monocrystals were detected and ...
The effect of impurity magnesium on the accumulation processes of compensating radiation defects in ...
The composite nickel-boron-diamond films microhardness is shown to be 1,5-2 times higher than this o...
The electroconductivity and tensosensibilily Cr and Ni films with thin overlayer Ge has been researc...
The possibility of the use of Lu and Ge doped silicon in the base MOS-technology were studied. Dopin...
Carrier mobility and resistivity of epitaxially grown Si1-xGex layers are investigated by differenti...
Quickly quenched foils of Pb - Cd system have the microcrystalline structure and texture (111). Micr...
Influence of cryogenic conditions of deformation on refining the structural Cu components in case of...
The low temperature (down- to ~1,6K) electric conductivity of germanium “doped” by radiation defects...
Experimental results are presented according to changes in the mechanical properties of zirconium-al...
The possibility of creation of silicon lasers based on the specific few-atomic structural imperfecti...
In this paper, we carried out a comparative investigation of the influence of the various modifiers ...
In the article the features of co-operation of diamond circles are considered with the nanost ruct u...
Temperature and size effects in thin films Co, Ni, Cr, Cu and Crfilms with Ge overlayer were investi...
A model of low frequency current oscillations in semi-insulating crystalline semiconductors with dee...
A number of new structural defects in a volume and on surfaces of Si-monocrystals were detected and ...
The effect of impurity magnesium on the accumulation processes of compensating radiation defects in ...
The composite nickel-boron-diamond films microhardness is shown to be 1,5-2 times higher than this o...
The electroconductivity and tensosensibilily Cr and Ni films with thin overlayer Ge has been researc...
The possibility of the use of Lu and Ge doped silicon in the base MOS-technology were studied. Dopin...
Carrier mobility and resistivity of epitaxially grown Si1-xGex layers are investigated by differenti...
Quickly quenched foils of Pb - Cd system have the microcrystalline structure and texture (111). Micr...
Influence of cryogenic conditions of deformation on refining the structural Cu components in case of...
The low temperature (down- to ~1,6K) electric conductivity of germanium “doped” by radiation defects...
Experimental results are presented according to changes in the mechanical properties of zirconium-al...
The possibility of creation of silicon lasers based on the specific few-atomic structural imperfecti...
In this paper, we carried out a comparative investigation of the influence of the various modifiers ...
In the article the features of co-operation of diamond circles are considered with the nanost ruct u...
Temperature and size effects in thin films Co, Ni, Cr, Cu and Crfilms with Ge overlayer were investi...
A model of low frequency current oscillations in semi-insulating crystalline semiconductors with dee...
A number of new structural defects in a volume and on surfaces of Si-monocrystals were detected and ...