Add to ORKGThe possibility of the use of Lu and Ge doped silicon in the base MOS-technology were studied. Doping by these impurities decreased the quantity of leakage current and increased the breakdown voltage of p - n-junctions and Si - Si02-polySi structures. It is shown that Ge and Lu doping of the epitaxial layers allows to improve the stability of p - n-junctions and MOS-structures to the radiation effects
This paper benchmarks various epitaxial growth schemes based on n-type group-IV materials as viable ...
one of the possibilities to modify and improve specific parameters of semiconductor devices. Germani...
Germanium-doped silicon is studied actively for application in microelectronics, in particular, as a...
II is shown that the use of silicon doped by Ge and Lu as substrates for epitaxial layers allows to ...
The influence of the rare-earth doping on the microhardness of the Cz-silicon and Cz-germanium monoc...
Substrate ionization currents are measured and electron mean free path and energy are defined for do...
The effect of impurity magnesium on the accumulation processes of compensating radiation defects in ...
Текст статьи не публикуется в открытом доступе в соответствии с политикой журнала
Carrier mobility and resistivity of epitaxially grown Si1-xGex layers are investigated by differenti...
The possibility of creation of silicon lasers based on the specific few-atomic structural imperfecti...
The effect of copper impurity on radiation-induced defect (RID) reactions in n-type silicon crystals...
The electroconductivity and tensosensibilily Cr and Ni films with thin overlayer Ge has been researc...
The low temperature (down- to ~1,6K) electric conductivity of germanium “doped” by radiation defects...
Substrate ionization currents are measured, electron mean free path and energy are defined for MOSFE...
学位の種別: 課程博士審査委員会委員 : (主査)東京大学教授 高木 信一, 東京大学教授 平川 一彦, 東京大学教授 平本 俊郎, 東京大学准教授 竹中 充, 東京大学准教授 喜多 浩之Univer...
This paper benchmarks various epitaxial growth schemes based on n-type group-IV materials as viable ...
one of the possibilities to modify and improve specific parameters of semiconductor devices. Germani...
Germanium-doped silicon is studied actively for application in microelectronics, in particular, as a...
II is shown that the use of silicon doped by Ge and Lu as substrates for epitaxial layers allows to ...
The influence of the rare-earth doping on the microhardness of the Cz-silicon and Cz-germanium monoc...
Substrate ionization currents are measured and electron mean free path and energy are defined for do...
The effect of impurity magnesium on the accumulation processes of compensating radiation defects in ...
Текст статьи не публикуется в открытом доступе в соответствии с политикой журнала
Carrier mobility and resistivity of epitaxially grown Si1-xGex layers are investigated by differenti...
The possibility of creation of silicon lasers based on the specific few-atomic structural imperfecti...
The effect of copper impurity on radiation-induced defect (RID) reactions in n-type silicon crystals...
The electroconductivity and tensosensibilily Cr and Ni films with thin overlayer Ge has been researc...
The low temperature (down- to ~1,6K) electric conductivity of germanium “doped” by radiation defects...
Substrate ionization currents are measured, electron mean free path and energy are defined for MOSFE...
学位の種別: 課程博士審査委員会委員 : (主査)東京大学教授 高木 信一, 東京大学教授 平川 一彦, 東京大学教授 平本 俊郎, 東京大学准教授 竹中 充, 東京大学准教授 喜多 浩之Univer...
This paper benchmarks various epitaxial growth schemes based on n-type group-IV materials as viable ...
one of the possibilities to modify and improve specific parameters of semiconductor devices. Germani...
Germanium-doped silicon is studied actively for application in microelectronics, in particular, as a...