Add to ORKGThe problem questions of the ion beam masking in microelectronics are considered. It shown, that the decision of the put task consists of two parts: a choice of optimum thickness of a protective mask and control of the technological defect
The numerical model of the electron transport in submicron MOSFET was developed. The influence of im...
The effect of impurity magnesium on the accumulation processes of compensating radiation defects in ...
Qualities and shortcomings in different methods of nonpalladium activation proper for dielectric met...
The problem questions of the ion beam masking in microelectronics are considered. Is shown, that the...
Design of electromagnetic field detector is described. Development is consists of PCB design, body d...
In article strength-stress state of the boundary wall of the chamber of outlet electronic and proton...
Questions of mathematical modeling of plasma border in systems of extraction and formation of a beam...
Physical and mathematical aspects of optimization of the forming process of dielectric microwaveguid...
The application of the finite element method for simulation the effect of electric field on shallow ...
The existing technologies of shaping of regular microrelief on cylindrical surfaces was analysed. Th...
In this article the method of the optimization of the constructive parameters of the punch of forge ...
The influence of basis surface conditions and a droplet component of a condensed plasma stream on a ...
Полный текст документа доступен пользователям сети БГУ.The text-book focuses on the main ways of sol...
The featured and easy-to-use IBAD technique was proposed in order to realise in situ ion implantatio...
192-192Numerical simulation of the processes of combined treatment of aluminum surfaces combining el...
The numerical model of the electron transport in submicron MOSFET was developed. The influence of im...
The effect of impurity magnesium on the accumulation processes of compensating radiation defects in ...
Qualities and shortcomings in different methods of nonpalladium activation proper for dielectric met...
The problem questions of the ion beam masking in microelectronics are considered. Is shown, that the...
Design of electromagnetic field detector is described. Development is consists of PCB design, body d...
In article strength-stress state of the boundary wall of the chamber of outlet electronic and proton...
Questions of mathematical modeling of plasma border in systems of extraction and formation of a beam...
Physical and mathematical aspects of optimization of the forming process of dielectric microwaveguid...
The application of the finite element method for simulation the effect of electric field on shallow ...
The existing technologies of shaping of regular microrelief on cylindrical surfaces was analysed. Th...
In this article the method of the optimization of the constructive parameters of the punch of forge ...
The influence of basis surface conditions and a droplet component of a condensed plasma stream on a ...
Полный текст документа доступен пользователям сети БГУ.The text-book focuses on the main ways of sol...
The featured and easy-to-use IBAD technique was proposed in order to realise in situ ion implantatio...
192-192Numerical simulation of the processes of combined treatment of aluminum surfaces combining el...
The numerical model of the electron transport in submicron MOSFET was developed. The influence of im...
The effect of impurity magnesium on the accumulation processes of compensating radiation defects in ...
Qualities and shortcomings in different methods of nonpalladium activation proper for dielectric met...