Add to ORKGThe electrical properties of bismuth-antimony system alloyed by In, Ga, S, Te in the temperature interval 77-220 K are presented. It is established that alloys Bi-Sb-In and Bi-Sb-Ga are low-temperature semiconductors of p-type, but Bi-Sb-Te and Bi-Sb-S are low-temperature semiconductors of n-type
The paper discussed the effect of tungsten inclusion into deposited from hypophosphite solutions Ni-...
The influence of the ratio of the initial components (bismuth orthoferrite, synthesized by various m...
Методом "мгновенного испарения" получены тонкие пленки полупроводникового эвтектического композита I...
The electrical properties of bismuth-antimony system alloyed by In, Ga, S, Te in the temperature int...
Results of investigation of grain structure and microhardness of rapidly solidified binary Bi-(8-12)...
In this article we consider electrophysical and mechanical properties of TiSi2, which is produced by...
According to the RoHS directive (July 2006), in the European Union the use of a number of hazardous ...
Полный текст документа доступен пользователям сети БГУ.The text-book focuses on the main ways of sol...
Temperature and size effects in thin films Co, Ni, Cr, Cu and Crfilms with Ge overlayer were investi...
Utillizing experimental dependences of a thermal resistance coefficient on thichnes for films Ni, Cu...
Electrophysical characteristics of graphite were investigated at temperature from 1273 to 3273K. Dep...
Temperature dependance of resistance and temperature coefficient of resistance of three layer films ...
In the article the process of metal-thermal reduction of components is investigated, the basic schem...
Dragan V. I., Lyustiber V. V. Experimental and theoretical substantiation of the bearing capacity of...
Carrier mobility and resistivity of epitaxially grown Si1-xGex layers are investigated by differenti...
The paper discussed the effect of tungsten inclusion into deposited from hypophosphite solutions Ni-...
The influence of the ratio of the initial components (bismuth orthoferrite, synthesized by various m...
Методом "мгновенного испарения" получены тонкие пленки полупроводникового эвтектического композита I...
The electrical properties of bismuth-antimony system alloyed by In, Ga, S, Te in the temperature int...
Results of investigation of grain structure and microhardness of rapidly solidified binary Bi-(8-12)...
In this article we consider electrophysical and mechanical properties of TiSi2, which is produced by...
According to the RoHS directive (July 2006), in the European Union the use of a number of hazardous ...
Полный текст документа доступен пользователям сети БГУ.The text-book focuses on the main ways of sol...
Temperature and size effects in thin films Co, Ni, Cr, Cu and Crfilms with Ge overlayer were investi...
Utillizing experimental dependences of a thermal resistance coefficient on thichnes for films Ni, Cu...
Electrophysical characteristics of graphite were investigated at temperature from 1273 to 3273K. Dep...
Temperature dependance of resistance and temperature coefficient of resistance of three layer films ...
In the article the process of metal-thermal reduction of components is investigated, the basic schem...
Dragan V. I., Lyustiber V. V. Experimental and theoretical substantiation of the bearing capacity of...
Carrier mobility and resistivity of epitaxially grown Si1-xGex layers are investigated by differenti...
The paper discussed the effect of tungsten inclusion into deposited from hypophosphite solutions Ni-...
The influence of the ratio of the initial components (bismuth orthoferrite, synthesized by various m...
Методом "мгновенного испарения" получены тонкие пленки полупроводникового эвтектического композита I...