Add to ORKGThe process of latent track etching in SiO2/Si structures irradiated with40Ar (38 MeV),84Kr (59 MeV) and 132Xe (133 and 200 MeV) ions has been investigated. The experimental results of SiO2etching in a hydrofluoric acid solution have been compared with the results of computer simulation based on the thermal spike model. It has been confirmed that the formation of a molten region along the swift ion trajectory with minimum radius of 3 nm can serve as a theoretical criterion for the reproducible latent track etching tracks in SiO
A comparison between experimental results on SiO2–Si under swift heavy ion irradiation at normal and...
A comparison between experimental results on SiO2–Si under swift heavy ion irradiation at normal and...
A comparison between experimental results on SiO2–Si under swift heavy ion irradiation at normal and...
The process of latent track etching in SiO2/Si structures irradiated with40Ar (38 MeV),84Kr (59 MeV)...
The latent track formation in silicon dioxide (SiO2) and silicon nitride (Si3N4) irradiated with swi...
The latent track formation in silicon dioxide (SiO2) and silicon nitride (Si3N4) irradiated with swi...
International audienceVitreous SiO2 thin films thermally grown onto Si wafers were bombarded by Au i...
International audienceVitreous SiO2 thin films thermally grown onto Si wafers were bombarded by Au i...
International audienceVitreous SiO2 thin films thermally grown onto Si wafers were bombarded by Au i...
Vitreous SiO2 thin films thermally grown onto Si wafers were bombarded by Au ions with energies from...
International audienceVitreous SiO2 thin films thermally grown onto Si wafers were bombarded by Au i...
International audienceVitreous SiO2 thin films thermally grown onto Si wafers were bombarded by Au i...
SiO2layers thermally grown on Si wafers were irradiated with swift heavy ions in the energy range of...
Vitreous SiO2 thin films thermally grown onto Si wafers were bombarded by Au ions with energies from...
A comparison between experimental results on SiO2–Si under swift heavy ion irradiation at normal and...
A comparison between experimental results on SiO2–Si under swift heavy ion irradiation at normal and...
A comparison between experimental results on SiO2–Si under swift heavy ion irradiation at normal and...
A comparison between experimental results on SiO2–Si under swift heavy ion irradiation at normal and...
The process of latent track etching in SiO2/Si structures irradiated with40Ar (38 MeV),84Kr (59 MeV)...
The latent track formation in silicon dioxide (SiO2) and silicon nitride (Si3N4) irradiated with swi...
The latent track formation in silicon dioxide (SiO2) and silicon nitride (Si3N4) irradiated with swi...
International audienceVitreous SiO2 thin films thermally grown onto Si wafers were bombarded by Au i...
International audienceVitreous SiO2 thin films thermally grown onto Si wafers were bombarded by Au i...
International audienceVitreous SiO2 thin films thermally grown onto Si wafers were bombarded by Au i...
Vitreous SiO2 thin films thermally grown onto Si wafers were bombarded by Au ions with energies from...
International audienceVitreous SiO2 thin films thermally grown onto Si wafers were bombarded by Au i...
International audienceVitreous SiO2 thin films thermally grown onto Si wafers were bombarded by Au i...
SiO2layers thermally grown on Si wafers were irradiated with swift heavy ions in the energy range of...
Vitreous SiO2 thin films thermally grown onto Si wafers were bombarded by Au ions with energies from...
A comparison between experimental results on SiO2–Si under swift heavy ion irradiation at normal and...
A comparison between experimental results on SiO2–Si under swift heavy ion irradiation at normal and...
A comparison between experimental results on SiO2–Si under swift heavy ion irradiation at normal and...
A comparison between experimental results on SiO2–Si under swift heavy ion irradiation at normal and...