Transition metal oxides constitute one of the most interesting material classes due to their wide variety of interesting and unusual properties. Often these properties are closely related to their defect structure. Within the transition metal oxide community SrTiO$_{3}$ is often referred to as a model material due to its well known defect chemistry. Therefore, in this work the possibilities of defect engineering are considered for this model material and the resulting properties are utilized for a highly interesting application: Resistive switching of SrTiO$_{3}$ in a metal insulator metal structure, a field of research where defects are key for the basic operation principle. The interest in transition metal oxides has been accompanied by a...
Due to physical limitations of the currently used flash memory in terms of writing speed and scalabi...
International audienceSrTiO3 becomes a high-mobility metallic conductor when doped with oxygen vacan...
Defect engineering has brought about a unique level of control for Si-based semiconductors, leading ...
Transition metal oxides constitute one of the most interesting material classes due to their wide va...
Resistive switching oxides are investigated at great length as promising candidates for the next gen...
The resistance switching phenomenon in many transition metal oxides is described by ion motion leadi...
The resistance switching phenomenon in many transition metal oxides is described by ion motion leadi...
The resistance switching phenomenon in many transition metal oxides is described by ion motion leadi...
We deliberately fabricated SrTiO3 thin films deviating from ideal stoichiometry and from two-dimensi...
To overcome the physical limits of todays memory technologies new concepts are needed. The resistive...
This perspective considers the enormous promise of epitaxial functional transition metal oxide thin ...
Using both computational and experimental analysis, we demonstrate a rich point-defect phase diagram...
Due to physical limitations of the currently used flash memory in terms of writing speed and scalabi...
Defect engineering has brought about a unique level of control for Si-based semiconductors, leading ...
Due to physical limitations of the currently used flash memory in terms of writing speed and scalabi...
Due to physical limitations of the currently used flash memory in terms of writing speed and scalabi...
International audienceSrTiO3 becomes a high-mobility metallic conductor when doped with oxygen vacan...
Defect engineering has brought about a unique level of control for Si-based semiconductors, leading ...
Transition metal oxides constitute one of the most interesting material classes due to their wide va...
Resistive switching oxides are investigated at great length as promising candidates for the next gen...
The resistance switching phenomenon in many transition metal oxides is described by ion motion leadi...
The resistance switching phenomenon in many transition metal oxides is described by ion motion leadi...
The resistance switching phenomenon in many transition metal oxides is described by ion motion leadi...
We deliberately fabricated SrTiO3 thin films deviating from ideal stoichiometry and from two-dimensi...
To overcome the physical limits of todays memory technologies new concepts are needed. The resistive...
This perspective considers the enormous promise of epitaxial functional transition metal oxide thin ...
Using both computational and experimental analysis, we demonstrate a rich point-defect phase diagram...
Due to physical limitations of the currently used flash memory in terms of writing speed and scalabi...
Defect engineering has brought about a unique level of control for Si-based semiconductors, leading ...
Due to physical limitations of the currently used flash memory in terms of writing speed and scalabi...
Due to physical limitations of the currently used flash memory in terms of writing speed and scalabi...
International audienceSrTiO3 becomes a high-mobility metallic conductor when doped with oxygen vacan...
Defect engineering has brought about a unique level of control for Si-based semiconductors, leading ...