In this study, a temperature equivalent voltage signal was obtained by subtracting output voltages received from two individual temperature sensors. These sensors work in the subthreshold region and generate the output voltage signals that are proportional and complementary to the temperature. Over the temperature range of −40◦C to +85◦C without using any calibration method, absolute temperature inaccuracy less than ±0.6◦C was attained from the measurement of five prototypes of the proposed temperature sensor. The implementation was done in a standard 0.18 µm CMOS technology with a total area of 0.0018 mm2. The total power consumption is 40 nW for a supply voltage of 1.2 V measured at room temperature.Peer reviewe
This paper describes a temperature sensor realized in a 65nm CMOS process with a batch-calibrated in...
We propose a fully on-chip CMOS temperature sensor in which a sub-threshold (sub-VT) proportional-to...
This brief presents a CMOS temperature sensor suitable for ultralow-power applications. With a MOS t...
This paper describes the design of a high-accuracy smart temperature sensor in the 40 nm standard CM...
Published online Oktober 2012; printed version January 2013 Accepted author manuscriptElectronic Ins...
Smart temperature sensors generally need to be trimmed to obtain measurement errors below ±2°C. The ...
Abstract—This paper proposes an accurate four-transistor temperature sensor designed, and developed,...
A CMOS digital temperature measurement technique is reported, which doesn't require an explicit refe...
The paper presents a very small size temperature sensor designed using a 0.35um CMOS process. Core t...
The development of low power CMOS technology has enabled a higher level of integration for ultra-low...
This paper describes a temperature sensor realized in a 65nm CMOS process with a batch-calibrated in...
A 6.4 nW 1.7% relative inaccuracy (R-IA) CMOS sub-thermal drain voltage-based temperature sensor is ...
We propose a fully-integrated temperature sensor for battery-operated, ultra-low power microsystems....
[[abstract]]This paper presents a time-domain CMOS oscillator-based temperature sensor with one-poin...
This paper presents a low power, energy-efficient precision CMOS temperature sensor. The front-end c...
This paper describes a temperature sensor realized in a 65nm CMOS process with a batch-calibrated in...
We propose a fully on-chip CMOS temperature sensor in which a sub-threshold (sub-VT) proportional-to...
This brief presents a CMOS temperature sensor suitable for ultralow-power applications. With a MOS t...
This paper describes the design of a high-accuracy smart temperature sensor in the 40 nm standard CM...
Published online Oktober 2012; printed version January 2013 Accepted author manuscriptElectronic Ins...
Smart temperature sensors generally need to be trimmed to obtain measurement errors below ±2°C. The ...
Abstract—This paper proposes an accurate four-transistor temperature sensor designed, and developed,...
A CMOS digital temperature measurement technique is reported, which doesn't require an explicit refe...
The paper presents a very small size temperature sensor designed using a 0.35um CMOS process. Core t...
The development of low power CMOS technology has enabled a higher level of integration for ultra-low...
This paper describes a temperature sensor realized in a 65nm CMOS process with a batch-calibrated in...
A 6.4 nW 1.7% relative inaccuracy (R-IA) CMOS sub-thermal drain voltage-based temperature sensor is ...
We propose a fully-integrated temperature sensor for battery-operated, ultra-low power microsystems....
[[abstract]]This paper presents a time-domain CMOS oscillator-based temperature sensor with one-poin...
This paper presents a low power, energy-efficient precision CMOS temperature sensor. The front-end c...
This paper describes a temperature sensor realized in a 65nm CMOS process with a batch-calibrated in...
We propose a fully on-chip CMOS temperature sensor in which a sub-threshold (sub-VT) proportional-to...
This brief presents a CMOS temperature sensor suitable for ultralow-power applications. With a MOS t...