Mononuclear and multinuclear phosphido, arsenido, and stibido complexes of aluminum, gallium and indium

" The present invention involves chemical compounds particularly useful for the preparation of thin films or layers of group 3/group 5 materials by MOCVD and other techniques. Such compounds may be represented as having the formulas [M(ER'R"").sub.3 ].sub.n or [RM(ER'R"").sub.2 ].sub.n or [R.sub.2 M(ER'R"")].sub.n wherein M is aluminum, gallium or indium; E is phosphorus, arsenic or antimony; R, R', and R"" are one or more of hydrogen, alkyl, aryl, alkyl-substituted aryl, cyclic alkyl, halide or other anionic group; and n is between about 1 and about 6. "Board of Regents, University of Texas Syste