Electronic structure of long wavelength (> 1.3 mu m) GaAsSb-capped InAs quantum dots
- Badcock, T. J.
- Hayne, M.
- Hopkinson, M.
- Jantsch, W
- Liu, H. Y.
- Moshchalkov, V V
- Mowbray, D. J.
- Nabavi, E.
- Nuytten, T.
- Schaffler, F
- Steer, M. J.
DOIAbstract
It is demonstrated that capping InAs self-assembled quantum dots with a thin GaAsSb layer allows the emission to be extended beyond 1.5 um at room temperature. This behaviour is attributed to the formation of a type-II system for Sb composition above -15%. Magneto-optical spectroscopy suggests that the type-II excitons remain compact and it is postulated that strain modulation of the GaAsSb layer results in hole localization immediately above the quantum dots
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