A Fast Switchable and Band-Tunable 5-7.5GHz LNA in 45nm CMOS SOI Technology for Multi-Standard Wake-up Radios

This work presents design and full implementation of a fast switchable and band-tunable 5 - 7.5 GHz low noise amplifier (LNA) in a 45nm CMOS SOI technology. The target application are wake-up receivers that employ aggressive duty cycling. Based on a cascode topology, the LNA utilizes a transformer for its 50 input matching as well as a balun with a capacitor bank to realize 8 digitally selectable bands. According to measurement results, the fabricated LNA exhibits a voltage gain of 18 - 21 dB while drawing a current of merely 2.2mA from a 1V supply. At all the 8 bands from 5 to 7.5 GHz, the input reflection coefficient lies below -8 dB, and the noise figure ranges from 7.8 to 6.2 dB. The LNA is able to settle in less than 9.5 n