Add to ORKGB diffusion in implanted Ni2Si and NiSi layers has been studied using secondary ion mass spectrometry, and compared to B redistribution profiles obtained after the reaction of a Ni layer on a B-implanted Si(001) substrate, in same annealing conditions (400-550 degrees C). B diffusion appears faster in Ni2Si than in NiSi. The B solubility limit is larger than 10(21) atom cm(-3) in Ni2Si, while it is similar to 3x10(19) atom cm(-3) in NiSi. The solubility limit found in NiSi is in agreement with the plateau observed in B profiles measured in NiSi after the reaction of Ni on B-implanted Si
Nickel silicide formation during the annealing of very high dose (≥4.5 x 10^17 ions/cm^2) Si i...
The present study addresses the mechanism of metal-induced growth of device-quality silicon thin fil...
In this work, the integrated diffusion coefficient, D'-int' is used to describe the growth kinetics ...
The diffusion and solubility of B implanted in δ-Ni2Si and NiSi layers is studied by SIMS. It is obs...
International audienceThe NiSi silicide that forms by reactive diffusion between Ni and Si-rich acti...
A systematic investigation of the diffusion of Be, B, Na, Mg, Cl, K, Ca, Ti, V, Cr, Mn, Fe, Ni, Zn, ...
This work is composed by two parts. In the first part, we have studied the boron redistribution in s...
The diffusion-controlled growth of niobium silicides (NbSi2 and Nb5Si3) was studied in Nb/Si and Nb/...
Includes bibliographical references.Atomic diffusion during the solid state formation of thin films ...
Ce travail de thèse est constitué de deux grandes parties. Dans la 1ere partie, nous avons étudié la...
L' objectif de cette étude est de quantifier la diffusion et la solubilité de I' As, du B et du Pt d...
A significant improvement of the lateral uniformity of thermally formed Ni_(2)Si layers has been obs...
International audienceThe NiSi silicide that forms by reactive diffusion between Ni and Si active re...
The influence of Ni thickness on the formation of Nickel silicides was systematically investigated b...
Nickel silicide formation during the annealing of very high dose (≥4.5 x 10^17 ions/cm^2) Si i...
The present study addresses the mechanism of metal-induced growth of device-quality silicon thin fil...
In this work, the integrated diffusion coefficient, D'-int' is used to describe the growth kinetics ...
The diffusion and solubility of B implanted in δ-Ni2Si and NiSi layers is studied by SIMS. It is obs...
International audienceThe NiSi silicide that forms by reactive diffusion between Ni and Si-rich acti...
A systematic investigation of the diffusion of Be, B, Na, Mg, Cl, K, Ca, Ti, V, Cr, Mn, Fe, Ni, Zn, ...
This work is composed by two parts. In the first part, we have studied the boron redistribution in s...
The diffusion-controlled growth of niobium silicides (NbSi2 and Nb5Si3) was studied in Nb/Si and Nb/...
Includes bibliographical references.Atomic diffusion during the solid state formation of thin films ...
Ce travail de thèse est constitué de deux grandes parties. Dans la 1ere partie, nous avons étudié la...
L' objectif de cette étude est de quantifier la diffusion et la solubilité de I' As, du B et du Pt d...
A significant improvement of the lateral uniformity of thermally formed Ni_(2)Si layers has been obs...
International audienceThe NiSi silicide that forms by reactive diffusion between Ni and Si active re...
The influence of Ni thickness on the formation of Nickel silicides was systematically investigated b...
Nickel silicide formation during the annealing of very high dose (≥4.5 x 10^17 ions/cm^2) Si i...
The present study addresses the mechanism of metal-induced growth of device-quality silicon thin fil...
In this work, the integrated diffusion coefficient, D'-int' is used to describe the growth kinetics ...