P-n junctions based on physical vapor deposition of thin PbSe films and conductivity type inversion from n- to p-type are developed and characterized over a wide range of temperatures and bias voltages. Photosensitivity and diode characteristics in the thin film PbSe diode structures were found at temperatures up to 300 K. The values of the measured and estimated parameters of these structures demonstrate their high photodetector performance and the potential for development of IR detectors with optimal sensitivity at the highest possible operating temperature
The PbSe alloy was prepared in evacuated quarts tubs by the method of melt quenching from element, t...
Thesis: S.B., Massachusetts Institute of Technology, Department of Materials Science and Engineering...
Ti, V, Cr, Nb, and Mo are found to be effective at increasing the Seebeck coefficient and power fact...
We report on the fabrication and characterization of a new type of mid-infrared photodetector. The i...
PbTe mesa diodes were fabricated from a series of p - n junctions grown on BaF2 substrates. For this...
There is a strong need for rad hard and high operating temperature IR detectors for space environmen...
The strong quantum confinement effect in lead selenide (PbSe) colloidal quantum dots (CQDs) allows t...
The broad application of lead selenide (PbSe)-based uncooled midinfrared (MIR) detectors has been hi...
Lead-chalcogenide semiconductor materials such as PbSe are an attractive class of narrow band-gap se...
Lead-salt photoconductive detectors, such as PbSe, are significant because they can operate at room ...
Infrared (IR) thermal detectors and photodetectors have significant applications including thermal i...
Lead selenide (PbSe) thin films deposited by aqueous-based chemical methods have recently reached co...
Thin films of PbSe are prepared by vacuum deposition technique on to well cleaned glass substrates. ...
Heavy metal Selenide has been investigated for more than half century for high operating temperature...
Lead chalcogenide (IV-VI narrow-gap semiconductor) layers on Si or BaF2(111) substrates are employed...
The PbSe alloy was prepared in evacuated quarts tubs by the method of melt quenching from element, t...
Thesis: S.B., Massachusetts Institute of Technology, Department of Materials Science and Engineering...
Ti, V, Cr, Nb, and Mo are found to be effective at increasing the Seebeck coefficient and power fact...
We report on the fabrication and characterization of a new type of mid-infrared photodetector. The i...
PbTe mesa diodes were fabricated from a series of p - n junctions grown on BaF2 substrates. For this...
There is a strong need for rad hard and high operating temperature IR detectors for space environmen...
The strong quantum confinement effect in lead selenide (PbSe) colloidal quantum dots (CQDs) allows t...
The broad application of lead selenide (PbSe)-based uncooled midinfrared (MIR) detectors has been hi...
Lead-chalcogenide semiconductor materials such as PbSe are an attractive class of narrow band-gap se...
Lead-salt photoconductive detectors, such as PbSe, are significant because they can operate at room ...
Infrared (IR) thermal detectors and photodetectors have significant applications including thermal i...
Lead selenide (PbSe) thin films deposited by aqueous-based chemical methods have recently reached co...
Thin films of PbSe are prepared by vacuum deposition technique on to well cleaned glass substrates. ...
Heavy metal Selenide has been investigated for more than half century for high operating temperature...
Lead chalcogenide (IV-VI narrow-gap semiconductor) layers on Si or BaF2(111) substrates are employed...
The PbSe alloy was prepared in evacuated quarts tubs by the method of melt quenching from element, t...
Thesis: S.B., Massachusetts Institute of Technology, Department of Materials Science and Engineering...
Ti, V, Cr, Nb, and Mo are found to be effective at increasing the Seebeck coefficient and power fact...