Add to ORKGThe Gallium Arsenide Field Effect transistor (GaAs FET) is experiencing a widespread acceptance in space and terrestrial systems due to its low noise, high gain and frequency characteristics unmatched by bipolar devices. This paper describes a design of a 4 GHz low noise amplifier with GaAs FETs using the scattering parameters method. Special attention is given to overall noise/gain optimization in the band of interest. The Smith Chart is used extensively to match the two-port device with microstrip networks. Analysis and performance of the amplifier are presented
Gallium arsenide transistors have a distinct advantage over silicon in terms of speed, with much hig...
This project studies the process of designing and analysing a narrowband Low Noise Amplifier (LNA) u...
This work deals with design, simulation and realisation of a receiving systém of an S-band front end...
The Gallium Arsenide Field Effect transistor (GaAs FET) is experiencing a widespread acceptance in s...
International Telemetering Conference Proceedings / October 24-27, 1983 / Sheraton-Harbor Island Hot...
The work reported in this thesis is concerned with the determination of the microwave characteristic...
The radio frequency amplifiers differ from audio frequency amplifiers in the choice of values and th...
The design of Broadband, Low-Noise and Power Microwave Amplifiers using microstrip softboard technol...
Two Q-band monolithic low noise amplifiers have been designed and characterized. A study about deple...
Includes bibliographical references (page 68)This thesis examines the realization of a microwave fee...
Power Amplifiers (PA) are very indispensable components in the design of numerous types of communica...
Originally published as thesis (Dept. of Electrical Engineering and Computer Science, M.S. and E.E.,...
The development of wireless portable electronics is moving towards smaller and lighter devices. Alth...
This paper describes the design and performance of a GaAs monolithic Low Noise Amplifier and Mixer d...
This work deals with the designing of an efficient low noise amplifier for 10.00 GHz applications. T...
Gallium arsenide transistors have a distinct advantage over silicon in terms of speed, with much hig...
This project studies the process of designing and analysing a narrowband Low Noise Amplifier (LNA) u...
This work deals with design, simulation and realisation of a receiving systém of an S-band front end...
The Gallium Arsenide Field Effect transistor (GaAs FET) is experiencing a widespread acceptance in s...
International Telemetering Conference Proceedings / October 24-27, 1983 / Sheraton-Harbor Island Hot...
The work reported in this thesis is concerned with the determination of the microwave characteristic...
The radio frequency amplifiers differ from audio frequency amplifiers in the choice of values and th...
The design of Broadband, Low-Noise and Power Microwave Amplifiers using microstrip softboard technol...
Two Q-band monolithic low noise amplifiers have been designed and characterized. A study about deple...
Includes bibliographical references (page 68)This thesis examines the realization of a microwave fee...
Power Amplifiers (PA) are very indispensable components in the design of numerous types of communica...
Originally published as thesis (Dept. of Electrical Engineering and Computer Science, M.S. and E.E.,...
The development of wireless portable electronics is moving towards smaller and lighter devices. Alth...
This paper describes the design and performance of a GaAs monolithic Low Noise Amplifier and Mixer d...
This work deals with the designing of an efficient low noise amplifier for 10.00 GHz applications. T...
Gallium arsenide transistors have a distinct advantage over silicon in terms of speed, with much hig...
This project studies the process of designing and analysing a narrowband Low Noise Amplifier (LNA) u...
This work deals with design, simulation and realisation of a receiving systém of an S-band front end...
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