Abstract This thesis presents the design, analysis, fabrication and testi ng of an in te grated common-emitter with cascaded common-collector amplifier circuit. This circuit is a well-known configuration usually st udied in an introductory course to electronics. The fabrication process is centered about the design and fabrication of the bipolar junction transistors used in the two-stage amplifier. The resistors, capacitors, and interconnections are integrated into the design and fabrication of the BJT. In order to accomplish the integration of the components into a twostage amplifier circuit, the design and generation of photolithographic masks is performed. Also, a fabrication schedule is constructed, tested, andexecuted to produce the am...
This work deals with issues of design and simulation of analog CMOS integrated circuit. The general ...
We present an electrical characterization of discrete Bipolar Junction Transistor (BJT) devices with...
The paper describes the design of a 38 dBm monolithic power amplifier at Ku band. The amplifier has ...
In this project, a process has been developed for the construction of a BIT common emitter amplifier...
The following article presents computer-aided design software for multi-stage amplifiers with bipola...
This research investigates the effect of stage cascade on amplifier circuits using transistor in the...
A bipolar fabrication service has been developed at the Rochester Institute of Technology to service...
The radio frequency amplifiers differ from audio frequency amplifiers in the choice of values and th...
A bipolar transistor is a semiconductor device commonly used for amplification. The device can ampli...
Harmonic power combining through a symmetric combiner network has the potential for extending the po...
This project serves as a study to determine the feasibility of the current CMOS toolsets and process...
The design of transistorized amplifiers for the special purpose of handling very small signals, at l...
Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer ...
This paper describes the analysis of processes used in microand nanoelectronic device manufacturing....
The paper describes the design of a 38 dBm monolithic power amplifier at Ku band. The amplifier has...
This work deals with issues of design and simulation of analog CMOS integrated circuit. The general ...
We present an electrical characterization of discrete Bipolar Junction Transistor (BJT) devices with...
The paper describes the design of a 38 dBm monolithic power amplifier at Ku band. The amplifier has ...
In this project, a process has been developed for the construction of a BIT common emitter amplifier...
The following article presents computer-aided design software for multi-stage amplifiers with bipola...
This research investigates the effect of stage cascade on amplifier circuits using transistor in the...
A bipolar fabrication service has been developed at the Rochester Institute of Technology to service...
The radio frequency amplifiers differ from audio frequency amplifiers in the choice of values and th...
A bipolar transistor is a semiconductor device commonly used for amplification. The device can ampli...
Harmonic power combining through a symmetric combiner network has the potential for extending the po...
This project serves as a study to determine the feasibility of the current CMOS toolsets and process...
The design of transistorized amplifiers for the special purpose of handling very small signals, at l...
Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer ...
This paper describes the analysis of processes used in microand nanoelectronic device manufacturing....
The paper describes the design of a 38 dBm monolithic power amplifier at Ku band. The amplifier has...
This work deals with issues of design and simulation of analog CMOS integrated circuit. The general ...
We present an electrical characterization of discrete Bipolar Junction Transistor (BJT) devices with...
The paper describes the design of a 38 dBm monolithic power amplifier at Ku band. The amplifier has ...