Add to ORKGA compact and accurate model for the substrate resistance is essential and critical for the characterization of MOSFET operation, particularly for the case of relatively large drain current and sizeable substrate current. This paper develops such a model taking into account the effects of device geometry, impact ionization, and conductivity modulation. Comparison of the present and existing models is given, and results obtained from device simulation are included in support of the model. (C) 2002 Published by Elsevier Science Ltd
Abstract-A new simplified two-dimensional model for the threshold voltage of MOSFET’s is derived in ...
A predictive, physically based substrate resistance model for CMOS transistors operating at radio fr...
ABSTRACT:-In this paper, a simple general yet realistic MOSFET model named n th power law MOSFET mod...
A compact and accurate model for the substrate resistance is essential and critical for the characte...
Substrate current is a good indicator for the hot-carrier and electrostatic discharge related reliab...
Substrate current is a good indicator for the hot-carrier and electrostatic discharge related reliab...
A circuit simulation model is presented suitable for the design of analogue and digital SOS MOSFET i...
Based on experimental data and physical understanding of the narrow width effect of source/drain par...
The AC behavior of absorbed parasitic series resistances of MOSFET models were compared to the conve...
Substrate noise is a major integration issue in mixed signal circuits; particularly at radio frequen...
This thesis reports on a study of analytical modelling of metal-oxide-semiconductor field effect tra...
An improved substrate current model for deep submicron MOSFETs, suitable for circuit aging simulatio...
The metal-oxide-semiconductor field-effect transistor (MOSFET) alternating-current (AC) behavior wit...
An improved substrate current model for deep submicron MOSFETs, suitable for circuit aging simulatio...
The importance of obtaining a compact analytical MOSFET model with physical model parameters is incr...
Abstract-A new simplified two-dimensional model for the threshold voltage of MOSFET’s is derived in ...
A predictive, physically based substrate resistance model for CMOS transistors operating at radio fr...
ABSTRACT:-In this paper, a simple general yet realistic MOSFET model named n th power law MOSFET mod...
A compact and accurate model for the substrate resistance is essential and critical for the characte...
Substrate current is a good indicator for the hot-carrier and electrostatic discharge related reliab...
Substrate current is a good indicator for the hot-carrier and electrostatic discharge related reliab...
A circuit simulation model is presented suitable for the design of analogue and digital SOS MOSFET i...
Based on experimental data and physical understanding of the narrow width effect of source/drain par...
The AC behavior of absorbed parasitic series resistances of MOSFET models were compared to the conve...
Substrate noise is a major integration issue in mixed signal circuits; particularly at radio frequen...
This thesis reports on a study of analytical modelling of metal-oxide-semiconductor field effect tra...
An improved substrate current model for deep submicron MOSFETs, suitable for circuit aging simulatio...
The metal-oxide-semiconductor field-effect transistor (MOSFET) alternating-current (AC) behavior wit...
An improved substrate current model for deep submicron MOSFETs, suitable for circuit aging simulatio...
The importance of obtaining a compact analytical MOSFET model with physical model parameters is incr...
Abstract-A new simplified two-dimensional model for the threshold voltage of MOSFET’s is derived in ...
A predictive, physically based substrate resistance model for CMOS transistors operating at radio fr...
ABSTRACT:-In this paper, a simple general yet realistic MOSFET model named n th power law MOSFET mod...