Density functional theory calculations are used to estimate the energy of interstitial oxygen (O(i)) released from tin-doped indium oxide (ITO). The currently accepted explanation of defect clusters\u27 irreducibility is based on different arrangements of doping atoms around O(i). in the present contribution we demonstrate that this concept has only a limited domain of applicability and explains the relative stability of different defect clusters with the same and fixed Sn:O(i) ratio. To describe practically the important case of ITO treatment under strong reduction conditions another limiting case of varying Sn:O(i) ratio is considered. It is found that in this particular case local coordination of doping atoms around O(i) plays only a min...
Tin monoxide (SnO) has promising properties to be applied as a p-type semiconductor in transparent e...
Experimental and theoretical techniques are used to investigate the impact of tin doping on the form...
We present a comparative study of oxygen vacancies in In2O3, SnO2, and ZnO based on the hybrid-funct...
Density functional theory calculations are used to estimate the energy of interstitial oxygen (Oi) r...
Intrinsic point defects in indium oxide, including vacancies, interstitials as well as antisites, ar...
We present a consistent interatomic force field for indium sesquioxide (In2O3) and tin dioxide (SnO2...
Doping In{sub 2}O{sub 3} with tin results in an improved transparent conducting oxide (TCO). Althoug...
The structural, vibrational and electronic properties of small clusters of indium oxide (InmOn; m; n...
The defect structure of bulk and nano-indium-tin oxide was investigated by a combination of experime...
A comparative study on the structure and stability of oxygen defects in ZnO is presented. By means o...
Using first principles using density functional theory (DFT), DFT calculations with a local exchange...
Indium oxide (IO) and indium tin oxide (ITO) are important metal oxide materials with a wide array o...
The electronic structure and magnetic properties of In2O3 with four kinds of intrinsic point defects...
First-principles simulations show that Pt single atoms and dimers are stabilized by tin doping in in...
Tin monoxide (SnO) has promising properties to be applied as a p-type semiconductor in transparent e...
Tin monoxide (SnO) has promising properties to be applied as a p-type semiconductor in transparent e...
Experimental and theoretical techniques are used to investigate the impact of tin doping on the form...
We present a comparative study of oxygen vacancies in In2O3, SnO2, and ZnO based on the hybrid-funct...
Density functional theory calculations are used to estimate the energy of interstitial oxygen (Oi) r...
Intrinsic point defects in indium oxide, including vacancies, interstitials as well as antisites, ar...
We present a consistent interatomic force field for indium sesquioxide (In2O3) and tin dioxide (SnO2...
Doping In{sub 2}O{sub 3} with tin results in an improved transparent conducting oxide (TCO). Althoug...
The structural, vibrational and electronic properties of small clusters of indium oxide (InmOn; m; n...
The defect structure of bulk and nano-indium-tin oxide was investigated by a combination of experime...
A comparative study on the structure and stability of oxygen defects in ZnO is presented. By means o...
Using first principles using density functional theory (DFT), DFT calculations with a local exchange...
Indium oxide (IO) and indium tin oxide (ITO) are important metal oxide materials with a wide array o...
The electronic structure and magnetic properties of In2O3 with four kinds of intrinsic point defects...
First-principles simulations show that Pt single atoms and dimers are stabilized by tin doping in in...
Tin monoxide (SnO) has promising properties to be applied as a p-type semiconductor in transparent e...
Tin monoxide (SnO) has promising properties to be applied as a p-type semiconductor in transparent e...
Experimental and theoretical techniques are used to investigate the impact of tin doping on the form...
We present a comparative study of oxygen vacancies in In2O3, SnO2, and ZnO based on the hybrid-funct...