Add to ORKGAn improved substrate current model for deep submicron MOSFETs, suitable for circuit aging simulation, is developed. The present model predictions are compared with experimental data and the BSIM3V3 model. A good agreement between the present model predictions and experimental data is obtained. (C) 2000 Elsevier Science Ltd. All rights reserved
A compact and accurate model for the substrate resistance is essential and critical for the characte...
In the present communication we have tried to study the substrate current behavior in the sub-micro...
A novel approach to formulating unified compact threshold voltage and drain current models for deep-...
An improved substrate current model for deep submicron MOSFETs, suitable for circuit aging simulatio...
An improved substrate current model, incorporating the drain and gate bias dependent velocity satura...
Substrate current is a good indicator for the hot-carrier and electrostatic discharge related reliab...
Substrate current is a good indicator for the hot-carrier and electrostatic discharge related reliab...
Experimental results are presented to indicate that the widely used power-law models for lifetime es...
Experimental results are presented to indicate that the widely used power-law models for lifetime es...
Experimental results are presented to indicate that the widely used power-law models for lifetime es...
In our study, we characterize the temperature and stress dependence of the substrate current, and wi...
A new analytical current model in strong inversion operation region for fully depleted SOI/MOSFET wi...
A new analytical current model in strong inversion operation region for fully depleted SOI/MOSFET wi...
A compact and accurate model for the substrate resistance is essential and critical for the characte...
An analytical current-voltage model in the subthreshold regime for deep-submicrometer fully depleted...
A compact and accurate model for the substrate resistance is essential and critical for the characte...
In the present communication we have tried to study the substrate current behavior in the sub-micro...
A novel approach to formulating unified compact threshold voltage and drain current models for deep-...
An improved substrate current model for deep submicron MOSFETs, suitable for circuit aging simulatio...
An improved substrate current model, incorporating the drain and gate bias dependent velocity satura...
Substrate current is a good indicator for the hot-carrier and electrostatic discharge related reliab...
Substrate current is a good indicator for the hot-carrier and electrostatic discharge related reliab...
Experimental results are presented to indicate that the widely used power-law models for lifetime es...
Experimental results are presented to indicate that the widely used power-law models for lifetime es...
Experimental results are presented to indicate that the widely used power-law models for lifetime es...
In our study, we characterize the temperature and stress dependence of the substrate current, and wi...
A new analytical current model in strong inversion operation region for fully depleted SOI/MOSFET wi...
A new analytical current model in strong inversion operation region for fully depleted SOI/MOSFET wi...
A compact and accurate model for the substrate resistance is essential and critical for the characte...
An analytical current-voltage model in the subthreshold regime for deep-submicrometer fully depleted...
A compact and accurate model for the substrate resistance is essential and critical for the characte...
In the present communication we have tried to study the substrate current behavior in the sub-micro...
A novel approach to formulating unified compact threshold voltage and drain current models for deep-...