The small thermal mass of microbolometers, used in antenna-coupled infrared detectors, makes them especially vulnerable to electrical stress caused by electrostatic discharge (ESD). In this paper, an empirical thermal model, which is independent of the device geometry, is used to characterize the behavior of microbolometers under ESD conditions. The parameters of this thermal model are fitted to measurements made on the microbolometers,and a power-to-failure versus time-to-failure curve is obtained. (C) 2000 John Wiley & Sons, Inc
Thermal runaway is one of the main causes of semiconductor device failure under electrostatic discha...
Proceedings of SPIE - The International Society for Optical Engineering34362668-674PSIS
Damage in ESD protection devices can be caused by high local temperatures ulting from heat generatio...
The small thermal mass of microbolometers, used in antenna-coupled infrared detectors, makes them es...
The small thermal mass of microbolometers, used in antenna-coupled infrared detectors, makes them es...
A Microbolometer is a specific type of uncooled infrared radiation detector used in thermal cameras,...
The electrical and thermal parameters of microbolometer infrared sensors play an important role in ...
The need for uncooled infrared focal plane arrays (IRFPA) for imaging systems has increased since th...
p. 1999-2008The nonlinear dynamic behavior of microbolometers, operating at room temperature (300 K)...
Infrared (IR) imaging is a key technology in a variety of military and civilian applications, especi...
Damage in ESD protection devices can be caused by high local temperatures resulting from heat genera...
This paper introduces an optimization approach of thermal conductance for single level uncooled micr...
This paper shows that theoretical analysis of the thermal model of damage to electrostatic discharge...
A detailed thermal behavior and theoretical analysis of uncooled resistive microbolometer is present...
The sensitivity of electrostatically actuated SiGe microelectromechanical systems to electrostatic d...
Thermal runaway is one of the main causes of semiconductor device failure under electrostatic discha...
Proceedings of SPIE - The International Society for Optical Engineering34362668-674PSIS
Damage in ESD protection devices can be caused by high local temperatures ulting from heat generatio...
The small thermal mass of microbolometers, used in antenna-coupled infrared detectors, makes them es...
The small thermal mass of microbolometers, used in antenna-coupled infrared detectors, makes them es...
A Microbolometer is a specific type of uncooled infrared radiation detector used in thermal cameras,...
The electrical and thermal parameters of microbolometer infrared sensors play an important role in ...
The need for uncooled infrared focal plane arrays (IRFPA) for imaging systems has increased since th...
p. 1999-2008The nonlinear dynamic behavior of microbolometers, operating at room temperature (300 K)...
Infrared (IR) imaging is a key technology in a variety of military and civilian applications, especi...
Damage in ESD protection devices can be caused by high local temperatures resulting from heat genera...
This paper introduces an optimization approach of thermal conductance for single level uncooled micr...
This paper shows that theoretical analysis of the thermal model of damage to electrostatic discharge...
A detailed thermal behavior and theoretical analysis of uncooled resistive microbolometer is present...
The sensitivity of electrostatically actuated SiGe microelectromechanical systems to electrostatic d...
Thermal runaway is one of the main causes of semiconductor device failure under electrostatic discha...
Proceedings of SPIE - The International Society for Optical Engineering34362668-674PSIS
Damage in ESD protection devices can be caused by high local temperatures ulting from heat generatio...