Dielectric breakdown of copper interconnects has been studied. The general continuity equation on Cu+, diffusion and drift is investigated. An analytical model to predict the lifetime of time-dependent dielectric breakdown is developed. The model predictions agree well with the previously published experimental data at different electric fields and temperatures. Under an acceleration stress condition, the lifetime is proportional to electric field exponentially and consistent with the E model
Electromigration lifetime considering the barrier layer effect under the DC and pulsed DC stress is ...
Time-dependent dielectric breakdown (TDDB) is becoming one of the main reliability issues of Cu/low-...
Although most interconnects carry pulsed current signals during field operations, most of our unders...
Dielectric breakdown of copper interconnects has been studied. The general continuity equation on Cu...
A physical model of copper interconnect dielectric breakdown is studied. The general continuity equa...
The time dependent dielectric breakdown phenomenon in copper low-k damascene interconnects for ultra...
The time dependent dielectric breakdown phenomenon in copper low-k damascene interconnects for ultra...
was published in Materials and is made available as an electronic reprint (preprint) with permission...
In this work, the simulation of the processes of diffusion of metal barrier ions into a low-k dielec...
Due to the shrinking of the device size in integrated circuits together with the use of novel, less ...
Time dependent dielectric breakdown (TDDB) is one of the important failure mechanisms for Copper (Cu...
Abstract—Backend low-k time-dependent dielectric breakdown degrades reliability of circuits with Cop...
Electromigration is the mass transport of atoms in a material due to elevated temperatures and an ap...
As integrated circuits scale down in size, their interconnects are placed under harsher conditions s...
Electromigration lifetime considering the barrier layer effect under the DC and pulsed DC stress is ...
Electromigration lifetime considering the barrier layer effect under the DC and pulsed DC stress is ...
Time-dependent dielectric breakdown (TDDB) is becoming one of the main reliability issues of Cu/low-...
Although most interconnects carry pulsed current signals during field operations, most of our unders...
Dielectric breakdown of copper interconnects has been studied. The general continuity equation on Cu...
A physical model of copper interconnect dielectric breakdown is studied. The general continuity equa...
The time dependent dielectric breakdown phenomenon in copper low-k damascene interconnects for ultra...
The time dependent dielectric breakdown phenomenon in copper low-k damascene interconnects for ultra...
was published in Materials and is made available as an electronic reprint (preprint) with permission...
In this work, the simulation of the processes of diffusion of metal barrier ions into a low-k dielec...
Due to the shrinking of the device size in integrated circuits together with the use of novel, less ...
Time dependent dielectric breakdown (TDDB) is one of the important failure mechanisms for Copper (Cu...
Abstract—Backend low-k time-dependent dielectric breakdown degrades reliability of circuits with Cop...
Electromigration is the mass transport of atoms in a material due to elevated temperatures and an ap...
As integrated circuits scale down in size, their interconnects are placed under harsher conditions s...
Electromigration lifetime considering the barrier layer effect under the DC and pulsed DC stress is ...
Electromigration lifetime considering the barrier layer effect under the DC and pulsed DC stress is ...
Time-dependent dielectric breakdown (TDDB) is becoming one of the main reliability issues of Cu/low-...
Although most interconnects carry pulsed current signals during field operations, most of our unders...