Latchup immunity is a challenging issue for the design of power supply clamps used in high-voltage electrostatic discharge (ESD) protection applications. While silicon-controlled rectifiers (SCRs) are highly robust ESD devices, they are traditionally not suited for high-voltage ESD due to their inherent low holding voltage and, thus, vulnerability to latchup. In this letter, a novel SCR stacking structure with an extremely high holding voltage, very small snapback, and acceptable failure current has been developed. The new and existing high holding voltage ESD devices are also compared to demonstrate the advancement of this work
A novel silicon controled rectifiers (SCR) is presented in this paper. This SCR, named as HH-LVTSCR,...
Robust and novel devices called high-holding low-voltage trigger silicon controlled rectifiers (HH-L...
In this letter, we develop a no-snapback silicon-controlled rectifier (NS-SCR) in a 0.35- μm BCD tec...
Latchup immunity is a challenging issue for the design of power supply clamps used in high-voltage e...
In this paper, a Silicon Controlled Rectifier (SCR)-based Electrostatic Discharge (ESD) protection c...
In this paper, we proposed a novel SCR (Silicon Controlled Rectifier) - based ESD (Electrostatic Dis...
Electrostatic discharge (ESD) protection for high-voltage integrated circuits is challenging due to ...
Electrostatic discharge (ESD) protection, for high-voltage integrated circuits is challenging due to...
In this study, an improved Electrostatic Discharge (ESD) protection circuit with low trigger voltage...
An electrostatic discharge (ESD) protection structure constructed by the stacking of multiple anode ...
An electrostatic discharge (ESD) protection structure constructed by the stacking of multiple anode ...
In this paper, we proposed the novel SCR-based ESD protection circuit with high holding voltage for ...
Electrostatic Discharge (ESD) phenomenon happens everywhere in our daily life. And it can occurs thr...
Due to latch-up issue,the main problem of silicon-controlled rectifier(SCR)for power supply clamps i...
A new silicon controlled rectifier low voltage triggered (SCR-LVT), to be adopted as protection stru...
A novel silicon controled rectifiers (SCR) is presented in this paper. This SCR, named as HH-LVTSCR,...
Robust and novel devices called high-holding low-voltage trigger silicon controlled rectifiers (HH-L...
In this letter, we develop a no-snapback silicon-controlled rectifier (NS-SCR) in a 0.35- μm BCD tec...
Latchup immunity is a challenging issue for the design of power supply clamps used in high-voltage e...
In this paper, a Silicon Controlled Rectifier (SCR)-based Electrostatic Discharge (ESD) protection c...
In this paper, we proposed a novel SCR (Silicon Controlled Rectifier) - based ESD (Electrostatic Dis...
Electrostatic discharge (ESD) protection for high-voltage integrated circuits is challenging due to ...
Electrostatic discharge (ESD) protection, for high-voltage integrated circuits is challenging due to...
In this study, an improved Electrostatic Discharge (ESD) protection circuit with low trigger voltage...
An electrostatic discharge (ESD) protection structure constructed by the stacking of multiple anode ...
An electrostatic discharge (ESD) protection structure constructed by the stacking of multiple anode ...
In this paper, we proposed the novel SCR-based ESD protection circuit with high holding voltage for ...
Electrostatic Discharge (ESD) phenomenon happens everywhere in our daily life. And it can occurs thr...
Due to latch-up issue,the main problem of silicon-controlled rectifier(SCR)for power supply clamps i...
A new silicon controlled rectifier low voltage triggered (SCR-LVT), to be adopted as protection stru...
A novel silicon controled rectifiers (SCR) is presented in this paper. This SCR, named as HH-LVTSCR,...
Robust and novel devices called high-holding low-voltage trigger silicon controlled rectifiers (HH-L...
In this letter, we develop a no-snapback silicon-controlled rectifier (NS-SCR) in a 0.35- μm BCD tec...