Data are presented showing that a quantum-dot laser diode can achieve a continuous-wave room-temperature threshold current density as low as 11.7 A/cm(2). The broad-area laser diode operates at a wavelength of 1.22 mu m and delivers a power level of 0.42 W with 40% maximum slope efficiency in p-up mounting without heatsinking. Spectral measurements indicate the onset of stimulated emission at similar to 6A/cm(2)
International audienceThe achievement of a 1.51 µm InAs/InP(311)B quantum dot (QD) single-mode Fabry...
The combination of high-growth-temperature GaAs spacer layers and high-reflectivity (HR)-coated face...
Very low threshold current density InGaAs/ GaAs quantum well laser diodes grown by molecular beam ep...
Data are presented showing that a quantum-dot laser diode can achieve a continuous-wave room-tempera...
An important advantage of the quantum dot (QD) laser diode is its ability to reach lasing threshold ...
Continuous-wave (CW) lasing operation with a very low threshold current density (J/sub th/=32.5 A/cm...
Data are presented demonstrating that a low-threshold quantum dot laser diode can achieve very low i...
We report on the growth and characterization of low threshold 1.32-μm quantum dots (QDs) laser diode...
Data are presented demonstrating that a low-threshold quantum dot laser diode can achieve very low i...
Continuous wave operation of a semiconductor laser diode based on five stacks of InAs quantum dots (...
Low threshold QD laser with threshold current density \u3c10 A/cm 2 is experimentally shown and thre...
Large cavity, very low threshold single layer quantum dot laser diodes with threshold current densit...
A high growth temperature step used for the GaAs spacer layer is shown to significantly improve the ...
Semiconductor quantum dots have replaced conventional inorganic phosphors in numerous applications. ...
Quantum dot lasers are predicted to have proved lasing characteristics compared to quantum well and ...
International audienceThe achievement of a 1.51 µm InAs/InP(311)B quantum dot (QD) single-mode Fabry...
The combination of high-growth-temperature GaAs spacer layers and high-reflectivity (HR)-coated face...
Very low threshold current density InGaAs/ GaAs quantum well laser diodes grown by molecular beam ep...
Data are presented showing that a quantum-dot laser diode can achieve a continuous-wave room-tempera...
An important advantage of the quantum dot (QD) laser diode is its ability to reach lasing threshold ...
Continuous-wave (CW) lasing operation with a very low threshold current density (J/sub th/=32.5 A/cm...
Data are presented demonstrating that a low-threshold quantum dot laser diode can achieve very low i...
We report on the growth and characterization of low threshold 1.32-μm quantum dots (QDs) laser diode...
Data are presented demonstrating that a low-threshold quantum dot laser diode can achieve very low i...
Continuous wave operation of a semiconductor laser diode based on five stacks of InAs quantum dots (...
Low threshold QD laser with threshold current density \u3c10 A/cm 2 is experimentally shown and thre...
Large cavity, very low threshold single layer quantum dot laser diodes with threshold current densit...
A high growth temperature step used for the GaAs spacer layer is shown to significantly improve the ...
Semiconductor quantum dots have replaced conventional inorganic phosphors in numerous applications. ...
Quantum dot lasers are predicted to have proved lasing characteristics compared to quantum well and ...
International audienceThe achievement of a 1.51 µm InAs/InP(311)B quantum dot (QD) single-mode Fabry...
The combination of high-growth-temperature GaAs spacer layers and high-reflectivity (HR)-coated face...
Very low threshold current density InGaAs/ GaAs quantum well laser diodes grown by molecular beam ep...