A new theoretical model has been proposed, which can satisfactorily explain the reported experimental data of the nanocrystallite size dependence of the gas sensitivity of nanocrystalline pure tin oxide (SnO2) thin film sensor. According to the proposed model, the gas sensitivity of nanocrystalline pure-SnO2 thin film sensor is directly proportional to the ratio 2d/D, where \u27d\u27 and \u27D\u27 are the space-charge layer thickness and the nanocrystallite size, respectively. The model suggests that gas sensitivity is enhanced drastically when the nanocrystallite size is less than twice of the space-charge layer thickness, which is in excellent agreement with the reported experimental behavior
International audienceThe variations of the electrical response of SnO2 thick film sensors (10-80 µm...
1063-1066This paper describes the effect of calcination temperature on the gas sensitive properties...
Tin dioxide (SnO2) with rutile type structure is a wide band n-type semiconductor which exhibits uni...
A new theoretical model has been proposed, which can satisfactorily explain the reported experimenta...
A new theoretical model has been proposed in this analysis to explain the experimentally observed ga...
A new theoretical model has been proposed in this analysis to explain the experimentally observed ga...
A new constitutive equation for the gas sensitivity of nanocrystalline tin oxide (SnO2) thin film se...
A new constitutive equation for the gas sensitivity of n-type semiconductor oxide thin film gas sens...
The gas-sensing mechanism of an n-type semiconductor (tin dioxide) gas sensor is reviewed in this pa...
The gas-sensing mechanism of an n-type semiconductor (tin dioxide) gas sensor is reviewed in this pa...
Nanocrystalline (6-8 nm) tin oxide (SnO 2) thin film (100-150 nm) sensor is synthesized via sol-gel ...
Nanocrystalline (6-8 nm) tin oxide (SnO2) thin film (100-150 nm) sensor is synthesized via sol-gel d...
Nanocrystalline tin dioxide has been employed to develop two types of sensor devices. Two electrical...
Among the various metal oxides, SnO<sub>2</sub> has been most widely exploited as a semiconductor ga...
We investigated the power-law responses in two types of tin dioxide (SnO2) films: one made from nano...
International audienceThe variations of the electrical response of SnO2 thick film sensors (10-80 µm...
1063-1066This paper describes the effect of calcination temperature on the gas sensitive properties...
Tin dioxide (SnO2) with rutile type structure is a wide band n-type semiconductor which exhibits uni...
A new theoretical model has been proposed, which can satisfactorily explain the reported experimenta...
A new theoretical model has been proposed in this analysis to explain the experimentally observed ga...
A new theoretical model has been proposed in this analysis to explain the experimentally observed ga...
A new constitutive equation for the gas sensitivity of nanocrystalline tin oxide (SnO2) thin film se...
A new constitutive equation for the gas sensitivity of n-type semiconductor oxide thin film gas sens...
The gas-sensing mechanism of an n-type semiconductor (tin dioxide) gas sensor is reviewed in this pa...
The gas-sensing mechanism of an n-type semiconductor (tin dioxide) gas sensor is reviewed in this pa...
Nanocrystalline (6-8 nm) tin oxide (SnO 2) thin film (100-150 nm) sensor is synthesized via sol-gel ...
Nanocrystalline (6-8 nm) tin oxide (SnO2) thin film (100-150 nm) sensor is synthesized via sol-gel d...
Nanocrystalline tin dioxide has been employed to develop two types of sensor devices. Two electrical...
Among the various metal oxides, SnO<sub>2</sub> has been most widely exploited as a semiconductor ga...
We investigated the power-law responses in two types of tin dioxide (SnO2) films: one made from nano...
International audienceThe variations of the electrical response of SnO2 thick film sensors (10-80 µm...
1063-1066This paper describes the effect of calcination temperature on the gas sensitive properties...
Tin dioxide (SnO2) with rutile type structure is a wide band n-type semiconductor which exhibits uni...