Add to ORKGIn this letter, a new compact model for the AlGaN/GaN high-electron mobility transistors developed based on explicit solutions to the Fermi level and the surface potential is presented. Its simple calculation and high accuracy in predicting the surface potential and current-voltage characteristics make the model ideal for circuit simulation applications. This surface-potential-based compact model accounts for the self-heating effect by considering the temperature-dependent free-carrier mobility. The model is verified against numerical results and measured data under a wide range of bias conditions
The gate leakage current of p-GaN gate HEMTs is modeled based on surface potential calculations. The...
This paper presents physics-based compact models for the C-V and I-V characteristics of AlGaN/GaN HE...
An analytical-numerical model for the total mobility of AlGaN/GaN based high electron mobility tran...
In this letter, a new compact model for the AlGaN/GaN high-electron mobility transistors developed b...
In this paper, the gate current in AlGaN/GaN high-electron mobility transistors is modeled analytica...
We present an accurate and robust surface-potential-based compact model for simulation of circuits d...
A thermal model of AlGaN/GaN high electron mobility transistors HEMTs has been developed based on ...
A surface potential (SP)-based analytical model for intrinsic charges in AlGaN/GaN high electron mob...
The performance of AlGaN-GaN high-electron mobility transistors (HEMTs) is influenced by the self-he...
We propose a surface potential (SP)-based compact model of p-GaN gate high electron mobility transis...
We present an analytical model for the I-V characteristics of AlGaN/GaN and AlInN/GaN high electron ...
We presented an explicit empirical model of the thermal resistance of AlGaN/GaN high-electron-mobili...
2005-2006 > Academic research: refereed > Publication in refereed journalVersion of RecordPublishe
An electron mobility model for AlGaN/GaN heterostructures taking both the lattice temperature and el...
An electron mobility model for AlGaN/GaN heterostructures taking both the lattice temperature and el...
The gate leakage current of p-GaN gate HEMTs is modeled based on surface potential calculations. The...
This paper presents physics-based compact models for the C-V and I-V characteristics of AlGaN/GaN HE...
An analytical-numerical model for the total mobility of AlGaN/GaN based high electron mobility tran...
In this letter, a new compact model for the AlGaN/GaN high-electron mobility transistors developed b...
In this paper, the gate current in AlGaN/GaN high-electron mobility transistors is modeled analytica...
We present an accurate and robust surface-potential-based compact model for simulation of circuits d...
A thermal model of AlGaN/GaN high electron mobility transistors HEMTs has been developed based on ...
A surface potential (SP)-based analytical model for intrinsic charges in AlGaN/GaN high electron mob...
The performance of AlGaN-GaN high-electron mobility transistors (HEMTs) is influenced by the self-he...
We propose a surface potential (SP)-based compact model of p-GaN gate high electron mobility transis...
We present an analytical model for the I-V characteristics of AlGaN/GaN and AlInN/GaN high electron ...
We presented an explicit empirical model of the thermal resistance of AlGaN/GaN high-electron-mobili...
2005-2006 > Academic research: refereed > Publication in refereed journalVersion of RecordPublishe
An electron mobility model for AlGaN/GaN heterostructures taking both the lattice temperature and el...
An electron mobility model for AlGaN/GaN heterostructures taking both the lattice temperature and el...
The gate leakage current of p-GaN gate HEMTs is modeled based on surface potential calculations. The...
This paper presents physics-based compact models for the C-V and I-V characteristics of AlGaN/GaN HE...
An analytical-numerical model for the total mobility of AlGaN/GaN based high electron mobility tran...