We summarize a novel integrated wavelength-stabilization scheme for broad stripe surface-emitting lasers. The method is based on two gratings fabricated on opposite sides of a device in which the first grating disperses light through the substrate to the opposite side, where the second surface has a feedback grating that operates under total internal reflection and in the Littrow condition to provide feedback into the gain medium. Experimental results have been obtained for both high power and a narrow linewidth, showing a CW slope of 0.85 W/A. (c) 2006 Optical Society of America
We introduce an approach to stabilizing the wavelength of a semiconductor laser employing a voltage-...
We present a high-power monolithically integrated dual-wavelength emission source employing a dual-g...
Wavelength stabilization against temperature variation of high-power broad area 1.5 μm InGaAsP/InP l...
We summarize a novel integrated wavelength-stabilization scheme for broad stripe surface-emitting la...
A new fully integrated wavelength stabilization scheme based on grating-coupled surface-emitting las...
This paper investigates wavelength locking of broad stripe grating coupled surface emitting lasers. ...
A dual grating reflector is a scheme for wavelength stabilization of laser diodes. The fabrication o...
We present a square broad area semiconductor surface emitting laser lasing in orthogonal directions ...
Vertical-Cavity Surface-Emitting Lasers (VCSELs) have replaced edge-emitting laser diodes in several...
This thesis deals with grating-coupled surface-emitting semiconductor lasers. The work is part of a ...
This thesis deals with the fabrication and characterization of grating-based integration-compatible ...
We present a high-power monolithically integrated dual-wavelength emission source employing a dual-g...
Broad Area Semiconductor edge-emitting lasers typically display self-focusing nonlinearity due to th...
Wide stripe semiconductor lasers have a wide variety of applications in remote sensing, in materials...
emission wavelength is not at the gain maximum of the active region, but at the resonance between la...
We introduce an approach to stabilizing the wavelength of a semiconductor laser employing a voltage-...
We present a high-power monolithically integrated dual-wavelength emission source employing a dual-g...
Wavelength stabilization against temperature variation of high-power broad area 1.5 μm InGaAsP/InP l...
We summarize a novel integrated wavelength-stabilization scheme for broad stripe surface-emitting la...
A new fully integrated wavelength stabilization scheme based on grating-coupled surface-emitting las...
This paper investigates wavelength locking of broad stripe grating coupled surface emitting lasers. ...
A dual grating reflector is a scheme for wavelength stabilization of laser diodes. The fabrication o...
We present a square broad area semiconductor surface emitting laser lasing in orthogonal directions ...
Vertical-Cavity Surface-Emitting Lasers (VCSELs) have replaced edge-emitting laser diodes in several...
This thesis deals with grating-coupled surface-emitting semiconductor lasers. The work is part of a ...
This thesis deals with the fabrication and characterization of grating-based integration-compatible ...
We present a high-power monolithically integrated dual-wavelength emission source employing a dual-g...
Broad Area Semiconductor edge-emitting lasers typically display self-focusing nonlinearity due to th...
Wide stripe semiconductor lasers have a wide variety of applications in remote sensing, in materials...
emission wavelength is not at the gain maximum of the active region, but at the resonance between la...
We introduce an approach to stabilizing the wavelength of a semiconductor laser employing a voltage-...
We present a high-power monolithically integrated dual-wavelength emission source employing a dual-g...
Wavelength stabilization against temperature variation of high-power broad area 1.5 μm InGaAsP/InP l...