Transient analysis of the heterojunction bipolar transistors switched from saturation to cutoff has been developed. The minority charges stored in the base and collector as a function of time are derived. The storage time of the heterojunction bipolar transistor is determined from the minority charge stored in the collector. The storage time can be significantly reduced using double heterojunction bipolar transistors. The present analysis is useful for determining non-quasi-static collector current during switch-off transient
The time-dependent minority carrier distribution in the base of a bipolar p/n junction subjected to ...
The Insulated Gate Bipolar Transistor is widely accepted as the preferred switching device in a vari...
A new numerical method is applied to the analysis of the charge partitioning in the quasi-neutral ba...
Transient analysis of the heterojunction bipolar transistors switched from saturation to cutoff has ...
Transient analysis of the heterojunction bipolar transistors switched from saturation to cutoff has ...
The paper demonstrates an experimental way of estimating the excess minority carriers charge stored ...
Transient analysis of bipolar transistors including built-in field and recombination in the base is ...
A new method is presented to evaluate the base and collector transit times, τB and τC in heterojunct...
This thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelo...
The base transit time of the bipolar transistor (BJT) in quasi-saturation has been evaluated. The ba...
The paper proposes and demonstrates an experimental waz of estimating the amount of stored charge of...
The base‐collector heterojunction space‐charge‐region capacitance of double heterojunction bipolar t...
Analytical equations of electric field, electrostatic potential, and junction capacitance for abrupt...
Analytical equations of electric field, electrostatic potential, and junction capacitance for abrupt...
The base transit time of the bipolar transistor (BJT) in quasi-saturation has been evaluated. The ba...
The time-dependent minority carrier distribution in the base of a bipolar p/n junction subjected to ...
The Insulated Gate Bipolar Transistor is widely accepted as the preferred switching device in a vari...
A new numerical method is applied to the analysis of the charge partitioning in the quasi-neutral ba...
Transient analysis of the heterojunction bipolar transistors switched from saturation to cutoff has ...
Transient analysis of the heterojunction bipolar transistors switched from saturation to cutoff has ...
The paper demonstrates an experimental way of estimating the excess minority carriers charge stored ...
Transient analysis of bipolar transistors including built-in field and recombination in the base is ...
A new method is presented to evaluate the base and collector transit times, τB and τC in heterojunct...
This thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelo...
The base transit time of the bipolar transistor (BJT) in quasi-saturation has been evaluated. The ba...
The paper proposes and demonstrates an experimental waz of estimating the amount of stored charge of...
The base‐collector heterojunction space‐charge‐region capacitance of double heterojunction bipolar t...
Analytical equations of electric field, electrostatic potential, and junction capacitance for abrupt...
Analytical equations of electric field, electrostatic potential, and junction capacitance for abrupt...
The base transit time of the bipolar transistor (BJT) in quasi-saturation has been evaluated. The ba...
The time-dependent minority carrier distribution in the base of a bipolar p/n junction subjected to ...
The Insulated Gate Bipolar Transistor is widely accepted as the preferred switching device in a vari...
A new numerical method is applied to the analysis of the charge partitioning in the quasi-neutral ba...