We present a systematic method for calculating the frequency-dependent collector signal delay time tau(CT)\u27 and the cutoff frequency f(T) of the heterojunction bipolar transistor (HBT). The method is developed based on the assumption that f(T) is limited by tau(CT)\u27. Furthermore, a piecewise-liner drift velocity profile is employed to account for velocity overshoot in the base-collector junction. Previous works employing the low-frequency approximation or the step-wise drift velocity profile, which assumes a constant velocity in the overshoot region, are also briefly reviewed and discussed
This paper presents a microscopic analysis of signal propagation delay in bipolar transistors featur...
An improved HBT small-signal parameter extraction procedure is presented in which all the equivalen...
160 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1993.Heterojunction bipolar transi...
We present a systematic method for calculating the frequency-dependent collector signal delay time t...
The collector signal delay time tau\u27(CT) and collector transit timer tau(CT) in the heterojunctio...
The collector signal delay time τCT and collector transit time τ′CT in the heterojunction bipolar tr...
A new method is presented to evaluate the base and collector transit times, τB and τC in heterojunct...
A new method is presented to evaluate the base and collector transit times, tB and 'te, in Heteroj...
Abstract — Transcapacitances and bias dependent total time delay and base resistance expressions fo...
An investigation into various methods of calculation of the high frequency performance parameter f[f...
This work describes the modeling of carrier transport in heterojunction bipolar transistors (HBT\u27...
High current densities in the collector layer reduce the cutoff frequency of heterojunction bipolar ...
The modeling of current-dependent cut-off frequency f(T) for AlGaAs/GaAs heterojunction bipolar tran...
In this paper, a new simulation method for two-tone characteristics calculations and the third-order...
Rapid improvements in Heterojunction Bipolar Transistor (HBT) device performance have made power app...
This paper presents a microscopic analysis of signal propagation delay in bipolar transistors featur...
An improved HBT small-signal parameter extraction procedure is presented in which all the equivalen...
160 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1993.Heterojunction bipolar transi...
We present a systematic method for calculating the frequency-dependent collector signal delay time t...
The collector signal delay time tau\u27(CT) and collector transit timer tau(CT) in the heterojunctio...
The collector signal delay time τCT and collector transit time τ′CT in the heterojunction bipolar tr...
A new method is presented to evaluate the base and collector transit times, τB and τC in heterojunct...
A new method is presented to evaluate the base and collector transit times, tB and 'te, in Heteroj...
Abstract — Transcapacitances and bias dependent total time delay and base resistance expressions fo...
An investigation into various methods of calculation of the high frequency performance parameter f[f...
This work describes the modeling of carrier transport in heterojunction bipolar transistors (HBT\u27...
High current densities in the collector layer reduce the cutoff frequency of heterojunction bipolar ...
The modeling of current-dependent cut-off frequency f(T) for AlGaAs/GaAs heterojunction bipolar tran...
In this paper, a new simulation method for two-tone characteristics calculations and the third-order...
Rapid improvements in Heterojunction Bipolar Transistor (HBT) device performance have made power app...
This paper presents a microscopic analysis of signal propagation delay in bipolar transistors featur...
An improved HBT small-signal parameter extraction procedure is presented in which all the equivalen...
160 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1993.Heterojunction bipolar transi...