A Power-Amplifier Based On An Extended Resonance Technique

A new power amplifier based on an extended resonance technique is presented. This technique produces high power through multiplying the power handling capability of a single device by the number of devices employed white maintaining the gain of a single-device amplifier. An X-band power combining amplifier employing four 100 mW MESFET\u27s was designed and constructed. The small signal gain was measured at 11.5 dB, and a maximum of 480 mW was obtained at 9.57 GHz with a power-added efficiency of 30.8%