Characterization and optimization of zinc oxide films by rf magnetron sputtering

Zinc oxide films were deposited by a r.f. magnetron sputtering using a zinc oxide target. The deposited films were characterized as a function of deposition temperature, pressure, argon-oxygen gas flow ratio, target-substrate distance. The deposition conditions were optimized to give good quality films suitable for the fabrication of surface acoustic wave device. The films deposited at temperatures as low as 250 degrees C yielded surface acoustic wave device quality. (C) 1997 Elsevier Science S.A