The ionization of impurity atoms is an important process in determining the number of free carriers, and thus the conductivity and other physical properties, in semiconductors. In this paper, a detailed derivation for the ionization percentage of impurity atoms is given. Furthermore, to illustrate the errors associated with the conventional complete ionization assumption, the results are applied to the modeling of the current-voltage characteristics of a p/n junction diode. Two-dimensional device simulations are included in support of the model. (C) 1999 Elsevier Science Ltd. All rights reserved
International audienceThis paper investigates the importance of incomplete ionization of dopants in ...
We present a detailed study on accurate modeling of highly aluminum-doped p+ silicon. We have analyz...
The ionization potential(IP) is the key to determine the positions of valence and conduction band ed...
The ionization of impurity atoms is an important process in determining the number of free carriers,...
A parametrization of the density of states (DOS) near the band edge of phosphorus-doped crystalline ...
In the work the dependence of the thermal ionization energy of hydrogen-like donors and acceptors on...
The incomplete ionization of impurity atoms affects the free carrier concentration of several wide-b...
Incomplete ionization is an important issue when modeling silicon devices featuring aluminum-doped p...
Building on Part I of this paper [Altermatt , J. Appl. Phys. 100, 113714 (2006)], the parametrizatio...
In this study we present an advanced method for precise modeling of highly aluminum-doped p+ silicon...
International audienceIn this paper, we show through both calculations and Hall effect measurements ...
In this paper, we show through both calculations and Hall effect measurements that incomplete ioniza...
The charge carrier contributions to impact ionization and avalanche multiplication are analyzed in d...
The ionization potential is the key to determine the absolute positions of valence and conduction ba...
The ionization potential(IP)is the key to determine valence and conduction band edges of a semicondu...
International audienceThis paper investigates the importance of incomplete ionization of dopants in ...
We present a detailed study on accurate modeling of highly aluminum-doped p+ silicon. We have analyz...
The ionization potential(IP) is the key to determine the positions of valence and conduction band ed...
The ionization of impurity atoms is an important process in determining the number of free carriers,...
A parametrization of the density of states (DOS) near the band edge of phosphorus-doped crystalline ...
In the work the dependence of the thermal ionization energy of hydrogen-like donors and acceptors on...
The incomplete ionization of impurity atoms affects the free carrier concentration of several wide-b...
Incomplete ionization is an important issue when modeling silicon devices featuring aluminum-doped p...
Building on Part I of this paper [Altermatt , J. Appl. Phys. 100, 113714 (2006)], the parametrizatio...
In this study we present an advanced method for precise modeling of highly aluminum-doped p+ silicon...
International audienceIn this paper, we show through both calculations and Hall effect measurements ...
In this paper, we show through both calculations and Hall effect measurements that incomplete ioniza...
The charge carrier contributions to impact ionization and avalanche multiplication are analyzed in d...
The ionization potential is the key to determine the absolute positions of valence and conduction ba...
The ionization potential(IP)is the key to determine valence and conduction band edges of a semicondu...
International audienceThis paper investigates the importance of incomplete ionization of dopants in ...
We present a detailed study on accurate modeling of highly aluminum-doped p+ silicon. We have analyz...
The ionization potential(IP) is the key to determine the positions of valence and conduction band ed...
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