A Seminumerical Model For Multi-Emitter Finger Algaas/Gaas Hbts
DOIAbstract
A semi-numerical model for the multiple-emitter finger heterojunction bipolar transistor (HBT) is presented. The model consists of an analytical model applicable for the single-finger HBT and a numerical program which solves the three-dimensional heat transfer equations. Experimentally observed thermally-limited I-V characteristics like the negative conductance and current crush phenomenon are accurately described by the model
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