Monolithically Integrated InP-based Unidirectional Circulators Utilizing non-Hermiticity and Nonlinearity

The need to integrate critical optical components on a single chip has been an ongoing quest in both optoelectronics and optical communication systems. Among the possible devices, elements supporting non-reciprocal transmission are of great interest for applications where signal routing and isolation is required. In this respect, breaking reciprocity is typically accomplished via Faraday rotation through appropriate magneto-optical arrangements. Unfortunately, standard light emitting optoelectronic materials like for example III-V semiconductors, lack magneto-optical properties and hence cannot be directly used in this capacity. To address these issues, a number of different tactics have been attempted in the last few years. These range from directly bonding garnets on chip, to parametric structures and unidirectional nonlinear arrangements involving ring resonators, to mention a few. Clearly, of importance will be to realize families of non-reciprocal devises that not only can be miniaturized and readily integrated on chip but they also rely on physical processes that are indigenous to the semiconductor wafer itself. Quite recently we have theoretically shown that such unidirectional systems can be implemented, provided one simultaneously exploits the presence of gain/loss processes and optical nonlinearities. In principle, these all-dielectric structures can be broadband, polarization insensitive, color-preserving, and can display appreciable isolation ratios provided they are used under pulsed conditions. In this study, we experimentally demonstrate a compact, monolithically integrated unidirectional 4×4 optical circulator, based on non-reciprocal optical transmission through successive amplification/attenuation stages and elements with very large resonance nonlinearities associated with InGaAsP quantum wells. Our results indicate that isolation ratios over 20dB can be experimentally achieved in pulse-mode operation. Our design can be effortlessly extended to other existing optoelectronic device systems beyond InP