Extreme ultraviolet lithography (EUVL) is a next generation lithographic techniques under development for fabricating semiconductor devices with feature sizes smaller than 32 nm. The optics to be used in the EUVL steppers is reflective optics with multilayer mirror coatings on each surface. The wavelength of choice is 13.5 nm determined by the optimum reflectivity of the mirror coatings. The light source required for this wavelength is derived from a hot-dense plasma produced by either a gas discharge or a laser. This study concentrate only on the laser produced plasma source because of its advantages of scalability to higher repetition rates. The design of a the laser plasma EUVL light source consists of a plasma produced from a high-inten...
We have configured a new type of target for laser plasma x-ray generation. This target consists of a...
We have previously proposed the use of mass-limited, tin-containing laser plasma sources for EUV lit...
We have configured a new type of target for laser plasma x-ray generation. This target consists of a...
Extreme ultraviolet lithography (EUVL) is a next generation lithographic techniques under developmen...
We are developing a mass-limited, laser plasma target concept that utilizes excited state transition...
We are developing a mass-limited, laser plasma target concept that utilizes excited state transition...
Extreme Ultraviolet (EUV) sources rely on droplet laser plasmas for EUV generation. These sources co...
The EUVL collector mirror reflectivity degradation can be measured as erosion of the mirror surface ...
Extreme ultraviolet lithography(EUVL) is being developed worldwide as the next generation technology...
We describe studies of the debris produced from a high-repetition-rate laser plasma EUVL source base...
We describe studies of the debris produced from a high-repetition-rate laser plasma EUVL source base...
Light sources based on laser plasmas using tin as target material are known to provide high conversi...
The advancement of laboratory based Extreme Ultraviolet (EUV) radiation has escalated with the desir...
Since 2002, we have been researching and developing a method for generation EUV light by irradiating...
We have previously proposed the use of mass-limited, tin-containing laser plasma sources for EUV lit...
We have configured a new type of target for laser plasma x-ray generation. This target consists of a...
We have previously proposed the use of mass-limited, tin-containing laser plasma sources for EUV lit...
We have configured a new type of target for laser plasma x-ray generation. This target consists of a...
Extreme ultraviolet lithography (EUVL) is a next generation lithographic techniques under developmen...
We are developing a mass-limited, laser plasma target concept that utilizes excited state transition...
We are developing a mass-limited, laser plasma target concept that utilizes excited state transition...
Extreme Ultraviolet (EUV) sources rely on droplet laser plasmas for EUV generation. These sources co...
The EUVL collector mirror reflectivity degradation can be measured as erosion of the mirror surface ...
Extreme ultraviolet lithography(EUVL) is being developed worldwide as the next generation technology...
We describe studies of the debris produced from a high-repetition-rate laser plasma EUVL source base...
We describe studies of the debris produced from a high-repetition-rate laser plasma EUVL source base...
Light sources based on laser plasmas using tin as target material are known to provide high conversi...
The advancement of laboratory based Extreme Ultraviolet (EUV) radiation has escalated with the desir...
Since 2002, we have been researching and developing a method for generation EUV light by irradiating...
We have previously proposed the use of mass-limited, tin-containing laser plasma sources for EUV lit...
We have configured a new type of target for laser plasma x-ray generation. This target consists of a...
We have previously proposed the use of mass-limited, tin-containing laser plasma sources for EUV lit...
We have configured a new type of target for laser plasma x-ray generation. This target consists of a...