科研費報告書収録論文(課題番号:09558027・基盤研究(B)(2)・H9～H12/研究代表者:羽生, 貴弘/1トランジスタセル多値連想メモリの試作とその応用
The polarization reversal in ferroelectric HfO₂ is adopted to store information in three distinct de...
The ferroelectricity in fluorite structure based hafnium oxide (HfO2) material expanded the horizon ...
In this paper, we give a perspective and recent overview of the emerging memory FeFET by shading the...
A novel architecture f o r a Multiple-Valued Ferroelectric Content-Addressable Memory (FCAM) is prop...
科研費報告書収録論文(課題番号:13558026・基盤研究(B)(2)・13～16/研究代表者:羽生, 貴弘/転送ボトルネックフリー多値ロジックインメモリVLSIの開発と応用
科研費報告書収録論文(課題番号:12480064・基盤研究(B)(2) ・H12～H14/研究代表者:亀山, 充隆/配線ボトルネックフリー2線式多値ディジタルコンピューティングVLSIシステム
International audienceEmerging non-volatile memories are getting new interest in the system design c...
application/pdf学術論文 (Article)科研費報告書収録論文(課題番号:13558026・基盤研究(B)(2)・13～16/研究代表者:羽生, 貴弘/転送ボトルネックフリー多値ロジッ...
科研費報告書収録論文(課題番号:09558027・基盤研究(B)(2)・H9～H12/研究代表者:羽生, 貴弘/1トランジスタセル多値連想メモリの試作とその応用
Described is a secure, multi-time programmable memory (MTPM) solution for the 14 nm FINFET node and ...
科研費報告書収録論文(課題番号:09558027・基盤研究(B)(2)・H9～H12/研究代表者:羽生, 貴弘/1トランジスタセル多値連想メモリの試作とその応用
This paper provides a brief overview of semiconductor memory design from the perspective of the impa...
Ferroelectric polymers and amorphous metal oxide semiconductors have emerged as important materials ...
A ferroelectric random-access memory structure and processes for fabricating a ferroelectric random-...
This paper proposes a novel single-electron multiple-valued memory. It is a metal-oxide-semiconducto...
The polarization reversal in ferroelectric HfO₂ is adopted to store information in three distinct de...
The ferroelectricity in fluorite structure based hafnium oxide (HfO2) material expanded the horizon ...
In this paper, we give a perspective and recent overview of the emerging memory FeFET by shading the...
A novel architecture f o r a Multiple-Valued Ferroelectric Content-Addressable Memory (FCAM) is prop...
科研費報告書収録論文(課題番号:13558026・基盤研究(B)(2)・13～16/研究代表者:羽生, 貴弘/転送ボトルネックフリー多値ロジックインメモリVLSIの開発と応用
科研費報告書収録論文(課題番号:12480064・基盤研究(B)(2) ・H12～H14/研究代表者:亀山, 充隆/配線ボトルネックフリー2線式多値ディジタルコンピューティングVLSIシステム
International audienceEmerging non-volatile memories are getting new interest in the system design c...
application/pdf学術論文 (Article)科研費報告書収録論文(課題番号:13558026・基盤研究(B)(2)・13～16/研究代表者:羽生, 貴弘/転送ボトルネックフリー多値ロジッ...
科研費報告書収録論文(課題番号:09558027・基盤研究(B)(2)・H9～H12/研究代表者:羽生, 貴弘/1トランジスタセル多値連想メモリの試作とその応用
Described is a secure, multi-time programmable memory (MTPM) solution for the 14 nm FINFET node and ...
科研費報告書収録論文(課題番号:09558027・基盤研究(B)(2)・H9～H12/研究代表者:羽生, 貴弘/1トランジスタセル多値連想メモリの試作とその応用
This paper provides a brief overview of semiconductor memory design from the perspective of the impa...
Ferroelectric polymers and amorphous metal oxide semiconductors have emerged as important materials ...
A ferroelectric random-access memory structure and processes for fabricating a ferroelectric random-...
This paper proposes a novel single-electron multiple-valued memory. It is a metal-oxide-semiconducto...
The polarization reversal in ferroelectric HfO₂ is adopted to store information in three distinct de...
The ferroelectricity in fluorite structure based hafnium oxide (HfO2) material expanded the horizon ...
In this paper, we give a perspective and recent overview of the emerging memory FeFET by shading the...
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