<Original Papers>SiO Generation Kinetics in the Reaction of SiC with Carbon Monoxide in the Temperature Range 1900 to 2200℃

Determination of the rates of reaction between silicon carbide and carbon monoxide is important not only in mathematical models of the blast furnace, specifically associated with silicon transfer to hot metal, but also in the attack of the silicon carbide ceramics by oxidizing atmospheres. Generation of silicon monoxide during the reaction SiC+CO=SiO+2C was investigated from the kinetic points of view in the temperature range 1900 to 2200℃ using a specimen of silicon carbide with the porosity of 42 percent. The results can be summarized as follows : 1) The outer shell of the SiC specimen is covered by porous graphite, forming a reaction zone between the outer graphite and the inner silicon carbide. 2) An increase of total pressure does not affect the rate of the reaction of silicon carbide with carbon monoxide. 3) The rate of the reaction increases with increasing temperature. 4) Assuming that the unreacted core model can be applied to the results obtained, the temperature dependence of the rate parameters were determined to be as follows : rate constant of chemical reaction k_c=1.91×10^8exp (-90,640/RT) intraparticle diffusion coefficient D_e=2.43×10_T^