科研費報告書収録論文(課題番号:13558026・基盤研究(B)(2)・13～16/研究代表者:羽生, 貴弘/転送ボトルネックフリー多値ロジックインメモリVLSIの開発と応用
Recently, considerable attention has been paid to the development of advanced technologies such as a...
In this paper, we consider devices, circuits, and systems comprised of transistors with integrated f...
A ferroelectric random-access memory structure and processes for fabricating a ferroelectric random-...
科研費報告書収録論文(課題番号:13558026・基盤研究(B)(2)・13～16/研究代表者:羽生, 貴弘/転送ボトルネックフリー多値ロジックインメモリVLSIの開発と応用
科研費報告書収録論文(課題番号:13558026・基盤研究(B)(2)・13～16/研究代表者:羽生, 貴弘/転送ボトルネックフリー多値ロジックインメモリVLSIの開発と応用
科研費報告書収録論文(課題番号:13558026・基盤研究(B)(2)・13～16/研究代表者:羽生, 貴弘/転送ボトルネックフリー多値ロジックインメモリVLSIの開発と応用
This book provides comprehensive coverage of the materials characteristics, process technologies, an...
DoctorAs the production of information increases, there is an increasing demand for a high-performan...
HfO2-based ferroelectric tunnel junctions (FTJs) represent a unique opportunity as both a next-gener...
The technological exploitation of ferroelectricity in CMOS electron devices offers new design opport...
The polarization reversal in ferroelectric HfO₂ is adopted to store information in three distinct de...
Non-volatile memories using ferroelectric capacitors, known as Ferroelectric Random Access Memory (F...
The subthreshold behavior of floating-gate MOSFETs connected with ferroelectric capacitors (FeCs) wa...
We report electrical characterization of memory elements consisting of a p-type silicon field-effect...
[[abstract]]In this work, Al/PbZr0.53Ti0.47O3(PZT)/n+-polysilicon/Y2O3/Si (MFPIS) capacitors and tra...
Recently, considerable attention has been paid to the development of advanced technologies such as a...
In this paper, we consider devices, circuits, and systems comprised of transistors with integrated f...
A ferroelectric random-access memory structure and processes for fabricating a ferroelectric random-...
科研費報告書収録論文(課題番号:13558026・基盤研究(B)(2)・13～16/研究代表者:羽生, 貴弘/転送ボトルネックフリー多値ロジックインメモリVLSIの開発と応用
科研費報告書収録論文(課題番号:13558026・基盤研究(B)(2)・13～16/研究代表者:羽生, 貴弘/転送ボトルネックフリー多値ロジックインメモリVLSIの開発と応用
科研費報告書収録論文(課題番号:13558026・基盤研究(B)(2)・13～16/研究代表者:羽生, 貴弘/転送ボトルネックフリー多値ロジックインメモリVLSIの開発と応用
This book provides comprehensive coverage of the materials characteristics, process technologies, an...
DoctorAs the production of information increases, there is an increasing demand for a high-performan...
HfO2-based ferroelectric tunnel junctions (FTJs) represent a unique opportunity as both a next-gener...
The technological exploitation of ferroelectricity in CMOS electron devices offers new design opport...
The polarization reversal in ferroelectric HfO₂ is adopted to store information in three distinct de...
Non-volatile memories using ferroelectric capacitors, known as Ferroelectric Random Access Memory (F...
The subthreshold behavior of floating-gate MOSFETs connected with ferroelectric capacitors (FeCs) wa...
We report electrical characterization of memory elements consisting of a p-type silicon field-effect...
[[abstract]]In this work, Al/PbZr0.53Ti0.47O3(PZT)/n+-polysilicon/Y2O3/Si (MFPIS) capacitors and tra...
Recently, considerable attention has been paid to the development of advanced technologies such as a...
In this paper, we consider devices, circuits, and systems comprised of transistors with integrated f...
A ferroelectric random-access memory structure and processes for fabricating a ferroelectric random-...
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