BEEM is a powerful, new low energy electron microscopy for imaging and spectroscopy of buried quantum objects and nondestructive local characterization of buried semiconductor heterostructures. We will present several applications : 1) Imaging and spectroscopy of 300Å InAs islands confined by GaAs potential barriers 2) Local conduction band offsets of GaSb self assembled quantum dots in GaAs 3) Spatial probing of the order-disorder transition in GaInP/GaAs heterostructures 4) Imaging of misfit dislocations at the InGaAs/GaAs interface buried 600Å below the surface 5) Conduction band structure of Ga
In this paper we present a ballistic electron emission microscopy (BEEM) modeling for the Si/Ge quan...
Ballistic electron emission microscopy (BEEM) was employed to study metal/dielectric/semiconductor d...
Ballistic electron emission microscopy (BEEM) has been used to study electron transport across singl...
BEEM is a powerful, new low energy electron microscopy for imaging and spectroscopy of buried quantu...
The measurement of heterojunction band parameters and their spatial variation is of fundamental impo...
Ballistic electron emission microscopy (BEEM) is a powerful new low energy electron microscopy in ma...
The use of scanning probe microscopies such as Scanning Tunneling Microscopy (STM) and Ballistic Ele...
Ballistic Electron Emission Microscopy (BEEM) has been shown to be a powerful tool for nanometer-sca...
The measurement of the physical properties of individual semiconductor quantum objects at a length s...
In 1988, Kaiser and Bell first demonstrated the unique capability of Ballistic Electron Emission Mic...
Single InAs self-assembled quantum dots buried spatially beneath a Au/GaAs interface are probed for ...
Individual GaSb self-assembled quantum dots in a GaAs matrix are imaged and probed using ballisitic ...
International audienceBallistic electron-emission microscopy (BEEM) is an experimental technique mea...
We present ballistic electron emission luminescence (BEEL) spectroscopy measurements of an InAs quan...
Monte Carlo simulations of the transport of electrons injected into the Γ valley of GaAs are perform...
In this paper we present a ballistic electron emission microscopy (BEEM) modeling for the Si/Ge quan...
Ballistic electron emission microscopy (BEEM) was employed to study metal/dielectric/semiconductor d...
Ballistic electron emission microscopy (BEEM) has been used to study electron transport across singl...
BEEM is a powerful, new low energy electron microscopy for imaging and spectroscopy of buried quantu...
The measurement of heterojunction band parameters and their spatial variation is of fundamental impo...
Ballistic electron emission microscopy (BEEM) is a powerful new low energy electron microscopy in ma...
The use of scanning probe microscopies such as Scanning Tunneling Microscopy (STM) and Ballistic Ele...
Ballistic Electron Emission Microscopy (BEEM) has been shown to be a powerful tool for nanometer-sca...
The measurement of the physical properties of individual semiconductor quantum objects at a length s...
In 1988, Kaiser and Bell first demonstrated the unique capability of Ballistic Electron Emission Mic...
Single InAs self-assembled quantum dots buried spatially beneath a Au/GaAs interface are probed for ...
Individual GaSb self-assembled quantum dots in a GaAs matrix are imaged and probed using ballisitic ...
International audienceBallistic electron-emission microscopy (BEEM) is an experimental technique mea...
We present ballistic electron emission luminescence (BEEL) spectroscopy measurements of an InAs quan...
Monte Carlo simulations of the transport of electrons injected into the Γ valley of GaAs are perform...
In this paper we present a ballistic electron emission microscopy (BEEM) modeling for the Si/Ge quan...
Ballistic electron emission microscopy (BEEM) was employed to study metal/dielectric/semiconductor d...
Ballistic electron emission microscopy (BEEM) has been used to study electron transport across singl...