We present the first atomically resolved scanning-tunneling micrographs of GaAs(001) surfaces prepared by metalorganic vapor-phase epitaxy (MOVPE). Thin films deposited in an MOVPE reactor were transferred to an ultra high vacuum system without air exposure. After heating the samples from 450 to 620℃, high-quality images of the (2x4)/c(2x8), (1x6)/(2x6) and (4x2)/c(8x2) reconstructions were obtained
The current study presents a new type of scanning tunneling microscope for the investigation of III-...
GaAs(114)A surfaces were prepared using molecular beam epitaxy followed by annealing in As-2 pressur...
The current study presents a new type of scanning tunneling microscope for the investigation of III-...
The atomic structure of the GaAs(001) surface has been disputed since molecular beam epitaxy (MBE) t...
Epitaxial layers grown by molecular beam epitaxy on both silicon and gallium arsenide substrates are...
Epitaxial layers grown by molecular beam epitaxy on both silicon and gallium arsenide substrates are...
We present a brief overview of surface structures of high-index GaAs surfaces, putting emphasis on r...
We present a brief overview of surface structures of high-index GaAs surfaces, putting emphasis on r...
We present a brief overview of surface structures of high-index GaAs surfaces, putting emphasis on r...
We investigate the surface evolution of Gallium Arsenide (001) during homoepitaxial growth with mole...
Scanning tunneling microscopy has been used to investigate molecular-beam epitaxy growth of GaAs. By...
A combined scanning tunneling microscopy and low-energy electron diffraction investigation of the Mn...
We investigate the surface evolution of Gallium Arsenide (001) during homoepitaxial growth with mole...
GaAs(114)A surfaces were prepared using molecular beam epitaxy followed by annealing in As-2 pressur...
GaAs(114)A surfaces were prepared using molecular beam epitaxy followed by annealing in As-2 pressur...
The current study presents a new type of scanning tunneling microscope for the investigation of III-...
GaAs(114)A surfaces were prepared using molecular beam epitaxy followed by annealing in As-2 pressur...
The current study presents a new type of scanning tunneling microscope for the investigation of III-...
The atomic structure of the GaAs(001) surface has been disputed since molecular beam epitaxy (MBE) t...
Epitaxial layers grown by molecular beam epitaxy on both silicon and gallium arsenide substrates are...
Epitaxial layers grown by molecular beam epitaxy on both silicon and gallium arsenide substrates are...
We present a brief overview of surface structures of high-index GaAs surfaces, putting emphasis on r...
We present a brief overview of surface structures of high-index GaAs surfaces, putting emphasis on r...
We present a brief overview of surface structures of high-index GaAs surfaces, putting emphasis on r...
We investigate the surface evolution of Gallium Arsenide (001) during homoepitaxial growth with mole...
Scanning tunneling microscopy has been used to investigate molecular-beam epitaxy growth of GaAs. By...
A combined scanning tunneling microscopy and low-energy electron diffraction investigation of the Mn...
We investigate the surface evolution of Gallium Arsenide (001) during homoepitaxial growth with mole...
GaAs(114)A surfaces were prepared using molecular beam epitaxy followed by annealing in As-2 pressur...
GaAs(114)A surfaces were prepared using molecular beam epitaxy followed by annealing in As-2 pressur...
The current study presents a new type of scanning tunneling microscope for the investigation of III-...
GaAs(114)A surfaces were prepared using molecular beam epitaxy followed by annealing in As-2 pressur...
The current study presents a new type of scanning tunneling microscope for the investigation of III-...
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