Add to ORKGCrystallization process of Pd-Si amorphous alloy containing about 20% silicon was investigated. It has been found that the crystallization initiales in the surface region at the relatively low temperature below about 250℃ and the atomosphere has an appreciable effect on the process. Rate of crystal growth follows the autocatalytic type of equation rather than usual Johnson-Mehr equation. Mechanism of crystallization are explained qualitatively. It was emphasized that these facts play a decisive role for the application to the electronic devices because of their large surface to volume ratis
Amorphous $\rm Pd_{81}Si_{19}$ is studied by scanning tunneling microscopy before and after crystall...
Low thermal budget solid-phase crystallization (SPC) of a-Si precursor films was achieved using surf...
This paper investigates the time and temperature dependence of amorphous silicon lateral crystalliza...
The amorphous Pd-Si alloys were prepared by two-piston type splat quenching technique, and the struc...
A method for crystallizing amorphous silicon (a-Si) films at low temperatures is proposed. In the me...
By rapid cooling from the melt, an amorphous phase has been obtained in palladium—silicon alloys con...
A rapid and low temperature crystallization of amorphous silicon (a-Si) films by Ar-H-2 mesoplasma a...
[[abstract]]The activation energy for Pd2Si formation on rf sputtered amorphous silicon between 400 ...
Annealing effects on structure of several amorphous metal-metalloid systems (Pd-Si, Fe-P-C, Fe-Si-B,...
The mechanisms of silicon nanocrystal structure formation in amorphous Si films have been studied fo...
An a-Si crystallization phenomenon that originates from the perimeter of a germanium seed during ann...
An improved pulsed rapid thermal annealing method has been used to crystallize amorphous silicon fil...
The crystallization processes of amorphous alloys (Co_<l-x>Fe_x)_<74.5>Si_<13.5>B_<12> of x=0.06, 0....
Low-temperature (400–540 °C) crystallization of amorphous and polycrystalline Si films deposited on ...
The investigation of polycrystalline silicon made on glass and carbon coated nickel substrates by al...
Amorphous $\rm Pd_{81}Si_{19}$ is studied by scanning tunneling microscopy before and after crystall...
Low thermal budget solid-phase crystallization (SPC) of a-Si precursor films was achieved using surf...
This paper investigates the time and temperature dependence of amorphous silicon lateral crystalliza...
The amorphous Pd-Si alloys were prepared by two-piston type splat quenching technique, and the struc...
A method for crystallizing amorphous silicon (a-Si) films at low temperatures is proposed. In the me...
By rapid cooling from the melt, an amorphous phase has been obtained in palladium—silicon alloys con...
A rapid and low temperature crystallization of amorphous silicon (a-Si) films by Ar-H-2 mesoplasma a...
[[abstract]]The activation energy for Pd2Si formation on rf sputtered amorphous silicon between 400 ...
Annealing effects on structure of several amorphous metal-metalloid systems (Pd-Si, Fe-P-C, Fe-Si-B,...
The mechanisms of silicon nanocrystal structure formation in amorphous Si films have been studied fo...
An a-Si crystallization phenomenon that originates from the perimeter of a germanium seed during ann...
An improved pulsed rapid thermal annealing method has been used to crystallize amorphous silicon fil...
The crystallization processes of amorphous alloys (Co_<l-x>Fe_x)_<74.5>Si_<13.5>B_<12> of x=0.06, 0....
Low-temperature (400–540 °C) crystallization of amorphous and polycrystalline Si films deposited on ...
The investigation of polycrystalline silicon made on glass and carbon coated nickel substrates by al...
Amorphous $\rm Pd_{81}Si_{19}$ is studied by scanning tunneling microscopy before and after crystall...
Low thermal budget solid-phase crystallization (SPC) of a-Si precursor films was achieved using surf...
This paper investigates the time and temperature dependence of amorphous silicon lateral crystalliza...