The thermal equilibrium between excitons whose levels are split by the stacking fault has been studied in terms of the temperature dependence of the photoluminescence spectrum in GaSe. The result confirms that there exists an energy transfer through the lattice vibration between the split exciton states which are spatially localized
We report on our investigations of excitonic luminescence spectra of Bridgmann grown GaSe crystals f...
Luminescence at energy lower than the absorption edge has been investigated in crystals of GaSe, con...
Luminescence at energy lower than the absorption edge has been investigated in crystals of GaSe, con...
We have studied the photoluminescence of GaSe at 80 K under energy-selective excitation conditions. ...
We have studied the photoluminescence of GaSe at 80 K under energy-selective excitation conditions. ...
The dynamics of direct and indirect excitons, either free or localized by the layer stacking disorde...
The dynamics of direct and indirect excitons, either free or localized by the layer stacking disorde...
Spontaneous excitonic luminescence in GaSe in investigated from 80 to 300 K and at weak laser excita...
Spontaneous excitonic luminescence in GaSe in investigated from 80 to 300 K and at weak laser excita...
We measured selective luminescence and excitation spectra at 80 K over the energy range of the direc...
The study of the temperature dependence of the optical properties of GaSe confirms the dominating ro...
We measured selective luminescence and excitation spectra at 80 K over the energy range of the direc...
We report on our investigations of excitonic luminescence spectra of Bridgmann grown GaSe crystals f...
The study of the temperature dependence of the optical properties of GaSe confirms the dominating ro...
The study of the temperature dependence of the optical properties of GaSe confirms the dominating ro...
We report on our investigations of excitonic luminescence spectra of Bridgmann grown GaSe crystals f...
Luminescence at energy lower than the absorption edge has been investigated in crystals of GaSe, con...
Luminescence at energy lower than the absorption edge has been investigated in crystals of GaSe, con...
We have studied the photoluminescence of GaSe at 80 K under energy-selective excitation conditions. ...
We have studied the photoluminescence of GaSe at 80 K under energy-selective excitation conditions. ...
The dynamics of direct and indirect excitons, either free or localized by the layer stacking disorde...
The dynamics of direct and indirect excitons, either free or localized by the layer stacking disorde...
Spontaneous excitonic luminescence in GaSe in investigated from 80 to 300 K and at weak laser excita...
Spontaneous excitonic luminescence in GaSe in investigated from 80 to 300 K and at weak laser excita...
We measured selective luminescence and excitation spectra at 80 K over the energy range of the direc...
The study of the temperature dependence of the optical properties of GaSe confirms the dominating ro...
We measured selective luminescence and excitation spectra at 80 K over the energy range of the direc...
We report on our investigations of excitonic luminescence spectra of Bridgmann grown GaSe crystals f...
The study of the temperature dependence of the optical properties of GaSe confirms the dominating ro...
The study of the temperature dependence of the optical properties of GaSe confirms the dominating ro...
We report on our investigations of excitonic luminescence spectra of Bridgmann grown GaSe crystals f...
Luminescence at energy lower than the absorption edge has been investigated in crystals of GaSe, con...
Luminescence at energy lower than the absorption edge has been investigated in crystals of GaSe, con...