The Change of the Electric Resistance of Bismuth Crystals in Strong Magnetic Fields. Part IV : The Discussion and the Interpretation of the Experimental Results

A discussion and the interpretaion of the experimental results in the change of resistance of bismuth single crystals and polycrystals in strong magnetic fields up to 200 kilo-oersted at room temperature were treated in the cases of the transverse phenomenon in Part II, the longitudinal phenomenon in Part III, and the phenomenon obtained by the case of the different directions between the current and the lines of force of the magnetic field relative to the orientation of the crystal in Part III. The origin of the exceptionally large difference in the change of resistance of bismuth crystal in strong magnetic fields has been cleared by the special character of the conduction electrons in bismuth crystal based on Jones\u27 model of the energy level in the bismuth crystal. Tht value obtaiued in the experiment and the theory are practically the same, The complicated change in a strong magnetic field with respect to the relative directions among the magnetic field, the current and the orientation of the crystal, is not thoroughly explained quantitatively. If these problems are explained by a futher study of the theory of solids, it will throw light on the peculiar character of the conduction phenomena in the bismuth crystal