科研費報告書収録論文(課題番号:13450281・基盤研究(B)(2)・H13～H15/研究代表者:小池, 淳一/超高速LSI用Cu配線におけるボイド形成機構の研究
textThermal stress and mass transport are key issues for Cu metallization yield and reliability. In...
科研費報告書収録論文(課題番号:13450281・基盤研究(B)(2) ・H13～H15/研究代表者:小池, 淳一/超高速LSI用Cu配線におけるボイド形成機構の研究
Electromigration is one of the major cause of copper interconnect degradation which limits reliabili...
科研費報告書収録論文(課題番号:13450281・基盤研究(B)(2) ・H13～H15/研究代表者:小池, 淳一/超高速LSI用Cu配線におけるボイド形成機構の研究
textInterconnect scaling has given rise to serious reliability concerns under the impact of low k i...
We report on a collective body of work wherein we have studied the mass transport phenomena which ar...
Recently Al was replaced by Cu as an interconnecting material. The primary objective of the present ...
Plastic deformation has been observed in damascene Cu interconnect test structures during an in-situ...
科研費報告書収録論文(課題番号:13450281・基盤研究(B)(2) ・H13～H15/研究代表者:小池, 淳一/超高速LSI用Cu配線におけるボイド形成機構の研究
A novel physical model and a simulation algorithm are used to predict electromigration (EM)-induced ...
In addition to statistically relevant standard reliability tests and lifetime analysis, the study of...
[[abstract]]Stress migration (SM) and electromigration (EM) were widely used to study the performanc...
Plastic behavior has previously been observed in metallic interconnects undergoing high current dens...
We present the first dynamic study of damage mechanisms in nanosized on-chip Cu interconnects caused...
Plastic behavior has previously been observed in metallic interconnects undergoing high-current-dens...
textThermal stress and mass transport are key issues for Cu metallization yield and reliability. In...
科研費報告書収録論文(課題番号:13450281・基盤研究(B)(2) ・H13～H15/研究代表者:小池, 淳一/超高速LSI用Cu配線におけるボイド形成機構の研究
Electromigration is one of the major cause of copper interconnect degradation which limits reliabili...
科研費報告書収録論文(課題番号:13450281・基盤研究(B)(2) ・H13～H15/研究代表者:小池, 淳一/超高速LSI用Cu配線におけるボイド形成機構の研究
textInterconnect scaling has given rise to serious reliability concerns under the impact of low k i...
We report on a collective body of work wherein we have studied the mass transport phenomena which ar...
Recently Al was replaced by Cu as an interconnecting material. The primary objective of the present ...
Plastic deformation has been observed in damascene Cu interconnect test structures during an in-situ...
科研費報告書収録論文(課題番号:13450281・基盤研究(B)(2) ・H13～H15/研究代表者:小池, 淳一/超高速LSI用Cu配線におけるボイド形成機構の研究
A novel physical model and a simulation algorithm are used to predict electromigration (EM)-induced ...
In addition to statistically relevant standard reliability tests and lifetime analysis, the study of...
[[abstract]]Stress migration (SM) and electromigration (EM) were widely used to study the performanc...
Plastic behavior has previously been observed in metallic interconnects undergoing high current dens...
We present the first dynamic study of damage mechanisms in nanosized on-chip Cu interconnects caused...
Plastic behavior has previously been observed in metallic interconnects undergoing high-current-dens...
textThermal stress and mass transport are key issues for Cu metallization yield and reliability. In...
科研費報告書収録論文(課題番号:13450281・基盤研究(B)(2) ・H13～H15/研究代表者:小池, 淳一/超高速LSI用Cu配線におけるボイド形成機構の研究
Electromigration is one of the major cause of copper interconnect degradation which limits reliabili...
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