Add to ORKGThis paper reports the effect of doping concentration to the electrical characteristic performance of the phase modulator in the carrier injection mode at wavelength 1.55μm. The phase modulator device has been integrated in the silicon-on-insulator (SOI) rib waveguide with the p-i-n diode structure. The electrical device performance is predicted using the 2-D semiconductor package SILVACO (CAD) software under DC operation. The least doping concentration of p+ and n+ region produces the least change of refractive index of the modulator. Meanwhile, results show that by increasing the doping concentrations, the value of Iπ decreases. This means that the phase modulator performance is better with increased doping concentrations
Much progress has been made in the development of active silicon opto-electronic devices over the la...
Over the past 15 years, much progress has been made in the development of active optical devices in ...
Problem statement: Metal interconnects have become significant limitation on the scaling of CMOS tec...
This paper reports the effect of doping concentration to the electrical characteristic performance ...
This paper presents the study of electrical characteristic of phase modulator in the carrier inject...
tThis paper highlights the study on various structure of silicon-on-insulator (SOI) optical phase mo...
This paper highlights the study of the carrier injection mode and the carrier depletion mode of the...
This paper highlights the study of carrier depletion effect on silicon waveguide with p-i-n diode a...
In this paper, we design and discuss the performance of a silicon phase modulator integrated in a si...
Silicon high-speed waveguide-integrated electro-optic modulator is one of the critical devices for o...
This paper highlights study of carrier dispersion effect on silicon waveguide with p-i-n diode and n...
Since 1980's, silicon photonic devices have been extensively studied, however a submicrometre-size...
Silicon-based optical phase modulators were studied. Two and three terminal devices integrated into ...
Silicon-on-insulator (SOI) is becoming more attractive as a photonic material for photonic integrate...
This paper reports on the optimization of the modulation efficiency of an SOI-based optical phase mo...
Much progress has been made in the development of active silicon opto-electronic devices over the la...
Over the past 15 years, much progress has been made in the development of active optical devices in ...
Problem statement: Metal interconnects have become significant limitation on the scaling of CMOS tec...
This paper reports the effect of doping concentration to the electrical characteristic performance ...
This paper presents the study of electrical characteristic of phase modulator in the carrier inject...
tThis paper highlights the study on various structure of silicon-on-insulator (SOI) optical phase mo...
This paper highlights the study of the carrier injection mode and the carrier depletion mode of the...
This paper highlights the study of carrier depletion effect on silicon waveguide with p-i-n diode a...
In this paper, we design and discuss the performance of a silicon phase modulator integrated in a si...
Silicon high-speed waveguide-integrated electro-optic modulator is one of the critical devices for o...
This paper highlights study of carrier dispersion effect on silicon waveguide with p-i-n diode and n...
Since 1980's, silicon photonic devices have been extensively studied, however a submicrometre-size...
Silicon-based optical phase modulators were studied. Two and three terminal devices integrated into ...
Silicon-on-insulator (SOI) is becoming more attractive as a photonic material for photonic integrate...
This paper reports on the optimization of the modulation efficiency of an SOI-based optical phase mo...
Much progress has been made in the development of active silicon opto-electronic devices over the la...
Over the past 15 years, much progress has been made in the development of active optical devices in ...
Problem statement: Metal interconnects have become significant limitation on the scaling of CMOS tec...