Analysis of dissolution of partially aggregated resist particles due to stochastic effect of exposure using DLA model

Exposure and development processes of EUV resists are investigated using numerical model and simulation. Diffusion limited aggregation (DLA) and percolation model are combined to investigate the dissolution process of metal particle resists. The relief image, which is produced after the exposure by a limited number of photons is investigated to identify the effect of stochastic effect of the material and dose, by investigating the line width roughness (LWR) and rate of failure of the pattern from the calculated image.SPIE photomask technology + EUV lithograph