Toward Realization of Ga2O3 Transistors for Power Electronics Applications

β-Ga2O3 is being actively pursued for power switching and harsh environment electronics. State-of-the-art Ga2O3 MOSFETs were realized on unintentionally-doped (UID) β-Ga2O3 (010) epilayers by employing Si-ion implantation doping for the channel and ohmic contacts. Field-plated depletion-mode devices delivered a high off-state breakdown voltage of 755 V, a large drain current on/off ratio of over 109, stable high temperature operation at 300°C, and dispersion-free pulsed output characteristics. Bulk Ga2O3 exhibited high gamma-ray tolerance, while radiation-induced dielectric damage and interface charge trapping limited the overall radiation hardness of these devices. Accumulation-mode normally-off operation was realized by gating a UID β-Ga2O3 (010) channel with low background carrier density. The design and operation of vertical Ga2O3 MOSFETs engineered with a current aperture will also be presented.14th International Conference on Modern Materials and Technologie