Simulation of statistical effects in exposure and development of EUV photoresists using the percolation and diffusion limited aggregation model.

Resolution, line-edge roughness (LWR), and sensitivity of photoresists have an essential importance for the realization of the extreme ultraviolet (EUV) lithography. We show the image formation of photoresists for the extreme-ultraviolet lithography (EUV) using computer simulation. We use the percolation model to investigate the LWR of metal nano-particle resists, which cause condensation by the absorption of EUV photon to form the negate-tone image. Calculation shows threshold dose for image formation of 20 mJ/cm2 for the metal particles with typical parameters. We also investigate how the roughness initially produced by the photon shot noise develops during the process of development using diffusion-limited aggregation model.第２回QST国際シンポジウ